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Journal de Physique IV (Proceedings)

Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device

J. COUTURIER, Jean‐Christophe Harmand, Paul H. Voisin

Published Oct 1, 1993• 3 citations
Publisher

Abstract

We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice PIN structures. Bistability results, in analogy with the self electro-optical effect device, from a positive feedback mecanism due to the interplay between Wannier-Stark effect, built-in field and screening by photocarriers.

DOI
10.1051/jp4:1993549

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Journal of the Optical Society of America B•Jul 1, 1987•0 citations
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice PIN structures. Bistability results, in analogy with the self electro-optical effect device, from a positive feedback mecanism due to the interplay between Wannier-Stark effect, built-in field and screening by photocarriers.
It is shown theoretically that optical bistability is possible in a self-electro-optic effect device (SEED) with single asymmetric quantum wells because of the blue shift of the optical absorption edge with applied field possible in such structures (in contrast to the normal red shift in symmetric wells). The concept is a simplification of the scheme of J. Khurgin [Appl. Phys. Lett. 53, 779 (1988)] (which uses unequal, opposed pairs of asymmetric wells) and shares the potential advantages of lower loss in the transmitting state and less stringent requirements on the exciton absorption peaks.