Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

The European Physical Journal B

Traces of the evolution from Mott insulator to a band insulator in the pair excitation spectra

B. D. Napitu, Jamal Berakdar

Published Feb 1, 2012• 4 citations
Publisher
DOI
10.1140/epjb/e2011-20679-6

Related papers

Computer Studies of Excitation Spectra and Correlations in Anderson-Mott Insulators.

B. Hadley

•Jan 1, 1987•0 citations

Particle-hole pair excitations in Mott insulator quench dynamics

Khan W. Mahmud, Lei Jiang, Philip R. Johnson +1 more

Bulletin of the American Physical Society•Mar 5, 2014•0 citations

Correlations in a band insulator

Michael A. Sentef, J. Kuneš, Philipp Werner +1 more

We study a model of a covalent band insulator with on-site Coulomb repulsion at half filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band insulator to a Mott insulator with hysteretic behavior at low temperatures. Increasing the temperature in the band insulator close to the insulator-insulator transition we find a crossover to a Mott insulator at elevated temperatures. Remarkably, correlations decrease the energy gap in the correlated band insulator. The gap renormalization can be traced to the low-frequency behavior of the self-energy, analogously to the quasiparticle renormalization in a Fermi liquid. While the uncorrelated band insulator is characterized by a single gap for both charge and spin excitations, the spin gap is smaller than the charge gap in the correlated system.

arXiv:0907.1237•Physical Review B•Oct 8, 2009•47 citations

Single-Particle Excitations in Mott Insulators

J. Monecke

De Gruyter eBooks•Dec 31, 1974•0 citations

Band to Mott Insulator Transition in the Ionic Hubbard Model

Ph. Brune, A. P. Kampf

Springer eBooks•Jan 1, 2002•0 citations

Topological charge excitations and Green's function zeros in paramagnetic Mott insulators

Emile Pangburn, C. Pépin, Anurag Banerjee

We investigate the emergence of topological features in the charge excitations of Mott insulators in the Chern-Hubbard model. In the strong correlation regime, treating electrons as the sum of holons and doublons excitations, we compute the topological phase diagram of Mott insulators at half-filling using composite operator formalism. The Green function zeros manifest as the tightly bound pairs of such elementary excitations of the Mott insulators. Our analysis examines the winding number associated with the occupied Hubbard bands and the band of Green's function zeros. We show that both the poles and zeros show gapless states and zeros, respectively, in line with bulk-boundary correspondence. The gapless edge states emerge in a junction geometry connecting a topological Mott band insulator and a topological Mott zeros phase. These include an edge electronic state that carries a charge and a charge-neutral gapless zero mode. Our study is relevant to several twisted materials with flat bands where interactions play a dominant role.

arXiv:2412.13302•Physical review. B./Physical review. B•Jul 14, 2025•4 citations
We study a model of a covalent band insulator with on-site Coulomb repulsion at half filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band insulator to a Mott insulator with hysteretic behavior at low temperatures. Increasing the temperature in the band insulator close to the insulator-insulator transition we find a crossover to a Mott insulator at elevated temperatures. Remarkably, correlations decrease the energy gap in the correlated band insulator. The gap renormalization can be traced to the low-frequency behavior of the self-energy, analogously to the quasiparticle renormalization in a Fermi liquid. While the uncorrelated band insulator is characterized by a single gap for both charge and spin excitations, the spin gap is smaller than the charge gap in the correlated system.
We investigate the emergence of topological features in the charge excitations of Mott insulators in the Chern-Hubbard model. In the strong correlation regime, treating electrons as the sum of holons and doublons excitations, we compute the topological phase diagram of Mott insulators at half-filling using composite operator formalism. The Green function zeros manifest as the tightly bound pairs of such elementary excitations of the Mott insulators. Our analysis examines the winding number associated with the occupied Hubbard bands and the band of Green's function zeros. We show that both the poles and zeros show gapless states and zeros, respectively, in line with bulk-boundary correspondence. The gapless edge states emerge in a junction geometry connecting a topological Mott band insulator and a topological Mott zeros phase. These include an edge electronic state that carries a charge and a charge-neutral gapless zero mode. Our study is relevant to several twisted materials with flat bands where interactions play a dominant role.