Physical Review Letters
Effects of Dissipation and Temperature on Macroscopic Quantum Tunneling
Sean Washburn, R. A. Webb, Richard F. Voss, S. M. Faris
Abstract
Measurements of the tunneling rate $\ensuremath{\Gamma}$ out of the zero-voltage state for several Nb edge junctions with differing shunt capacitances are described. At zero temperature, increasing the shunt capacitance lowers $\ensuremath{\Gamma}$ in agreement with dissipative calculations of the macroscopic-quantum-tunneling rate. As temperature increases, $\mathrm{ln}[\frac{\ensuremath{\Gamma}(T)}{\ensuremath{\Gamma}(0)}]\ensuremath{\propto}{T}^{2}$ as recently predicted.