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AIP Advances

Giant fifth-order nonlinearity via tunneling induced quantum interference in triple quantum dots

Si-Cong Tian, Ren-Gang Wan, Cunzhu Tong, Yongqiang Ning

Published Feb 1, 2015• 6 citations
Publisher

Abstract

Schemes for giant fifth-order nonlinearity via tunneling in both linear and triangular triple quantum dots are proposed. In both configurations, the real part of the fifth-order nonlinearity can be greatly enhanced, and simultaneously the absorption is suppressed. The analytical expression and the dressed states of the system show that the two tunnelings between the neighboring quantum dots can induce quantum interference, resulting in the giant higher-order nonlinearity. The scheme proposed here may have important applications in quantum information processing at low light level.

DOI
10.1063/1.4908008

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Schemes for giant fifth-order nonlinearity via tunneling in both linear and triangular triple quantum dots are proposed. In both configurations, the real part of the fifth-order nonlinearity can be greatly enhanced, and simultaneously the absorption is suppressed. The analytical expression and the dressed states of the system show that the two tunnelings between the neighboring quantum dots can induce quantum interference, resulting in the giant higher-order nonlinearity. The scheme proposed here may have important applications in quantum information processing at low light level.
A scheme for giant enhancement of the Kerr nonlinearity in linear triple quantum dot molecules is proposed. In such a system, the tunneling-induced transparency window obtained in double quantum dot molecules splits into two windows, due to the coupling with the third quantum dot. And most important, the Kerr nonlinearity can be enhanced by several orders of magnitude, compared with that generated in double quantum dot molecules. With proper detuning of the tunneling, giant Kerr nonlinearity accompanied by vanishing absorption can be realized, which opens the possibility to enhance self-phase modulation in tunneling controllable semiconductor nanostructures under conditions of low light levels. Quantitative analysis shows that the giant Kerr nonlinearity is attributed to the interacting double dark resonances induced by the tunneling between the triple quantum dots, therefore no extra laser fields are required.
A scheme for giant Kerr nonlinearity via tunneling in triangular triple quantum dot molecules is proposed. In such a system, the linear absorption and the Kerr nonlinearity depend critically on the energy splitting of the excited states and the tunneling intensity. With proper parameters, giant Kerr nonlinearity accompanied by vanishing absorption can be realized. The enhancement of Kerr nonlinearity is attributed to the interacting double dark resonances induced by the tunneling between the quantum dots, requiring no extra coupling laser fields.
Tunneling-induced large fifth-order nonlinearity is theoretically demonstrated in a double-quantum-dot system. The resonant tunneling induces constructive interference for the third- and fifth-order nonlinear effects. The competition between the linearity and nonlinearity leads to a transparency window at some frequency detunings, where the fifth-order nonlinear refractive index could be increased to be more than one order of magnitude larger than that on resonance. An analytical expression shows that the resonant tunneling mainly contributes to the dramatic enhancement of the fifth-order nonlinear response.
The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system. Most importantly, it is possible to realize enhanced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption by choosing suitable parameters for the multiple quantum dots. These results have many potential applications in nonlinear optics and quantum information devices using semiconductor quantum dots.
We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption peak to a sublinewidth level. Analytical expressions show that the enhanced nonlinear absorption is largely due to the fifth-order nonlinear term. Competition between third- and fifth-order nonlinearities leads to an anomalous dispersion of the total susceptibility.
A scheme for tunneling control of cavity linewidth narrowing by quantum interference in triangular-type triple quantum dots (TQDs) is proposed. In such system, quantum interference induced by tunneling between the TQDs can result in the appearance of two transparency windows and a steep dispersion. Furthermore, when the sample is embedded in a ring cavity, an ultranarrow transmission peak is obtained within the narrowed transparency windows. And by varying the tunneling, the linewidth and the position of the ultranarrow transmission peak can be engineered. Because no coupling laser is required, the scheme proposed here is more convenient for future experiments and applications in optics, and may be useful in designing novel optoelectronic devices.