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Nature Physics

Measurement of quantum noise in a single-electron transistor near the quantum limit

W. W. Xue, Zhongqing Ji, Feng Pan, Joel Stettenheim, M. P. Blencowe, A. J. Rimberg

Published Jul 20, 2009• 44 citations
Publisher
DOI
10.1038/nphys1339

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A Single-Electron Transistor (SET) is a highly sensitive charge amplifier based on the Coulomb blockade that can operate near the quantum limit: amplification can be accomplished with a back-action close to that required by the uncertainty principle. Its charge sensitivity is ultimately limited to about 1micre/sqrt(Hz) by the shot noise in the source-drain current. Despite the fact that such sensitivity has been approached by some, the shot-noise limit has yet to be reached for either the SET and its RF version, the RF-SET. A scheme is proposed and realized in this thesis for the shot noise-limited detection of a Single-Electron Transistor, based on a DC-SQUID impedance-matched with a DC-biased SET. SQUIDs can operate at the quantum limit, and a microstrip SQUID amplifier has already been demonstrated to operate at almost twice the quantum-limited noise temperature at about 500MHz by M. Muck and collaborators, with a sensitivity sufficient to resolve the SET shot noise. The device has been fabricated and characterized. A 50KOhm resistor has been used as a noise source at low temperature and the measured noise levels have been estimated. Moreover, the detection noise temperature of about 110mK was derived corresponding to a current sensitivity of about 8fA/sqrt(Hz) for the detection of a 100KOhm resistor.
We have fabricated an aluminum single-electron transistor and characterized it at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the transistor is embedded. We measured the charge sensitivity of this radio-frequency single-electron transistor to be 3.2×10−6 e/Hz, which corresponds to the uncoupled energy sensitivity of 4.8 ℏ. Our measurements indicate that with further improvements, the radio-frequency single-electron transistor could reach the shot-noise limit estimated to be about 1 ℏ.
We present a method for the measurement of the noise of microwave amplifiers operating at the single photon level. It is based on the shot noise produced by a nanowire resistor in the hot electron regime. This noise source is simply controlled by a dc current and offers the advantage of being self-calibrating. After testing the noise source with a cryogenic high electron mobility transistor amplifier, we demonstrate its usefulness by calibrating a Josephson parametric amplifier operating near the quantum limit.