Transverse effects in the laser threshold, originated by electronic-vibrational coupling in the active centers, are analyzed theoretically by means of the semiclassical two-level Maxwell-Bloch equations. A single longitudinal mode is considered. It is found that the first laser threshold suffers modifications depending on the electronic-vibrational coupling strength. This coupling imposes certain conditions for the selection of a particular transverse spatial state and provides the minimum wavelength that can appear in the transverse pattern. The nature of the bifurcation and the stability of the homogeneous and critical traveling waves are analyzed.
In this work, we show how electron-vibrational mode coupling can be used to drive maximally entangled states. The physical system consists of two pairs of quantum dots, each pair with a single electron able to tunnel between the dots, thus encoding a qubit. The electron-vibrational mode coupling, described by the strength parameter
g, yields to an effective electron-electron interaction, responsible for the formation of a maximally entangled quantum state. Both the formation time and the relative phase of the aforementioned state are strongly dependent on
g. The quantum dynamics exhibits a nonmonotonic behavior as
g increases, an effect explained through an effective Hamiltonian that takes into account high-order transition processes.
The effect of ambient magnetic fields on the dynamics of a single trapped ion is studied analytically. We consider two electronic states with energy separation stochastically varied by magnetic-field perturbations and coupled to the vibrational modes by a laser. For Gaussian white noise, a master equation is derived and solved. The results obtained reveal how the effective Rabi frequencies and the decay rates depend on the noise strength and on the number state index. The detection of features specific to magnetic-field noise in the evolution of states that can be prepared under standard experimental conditions is discussed. A comparison with the effects of laser intensity and phase fluctuations is presented. Implications for the realization of logic gates are analyzed.