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Journal of Optical Networking

Two-wavelength switching with 1550 nm semiconductor laser amplifiers

Antonio Hurtado, M.J. Adams

Published Jan 1, 2007• 21 citations
Publisher

Abstract

Feature Issue on Photonics in SwitchingTwo-wavelength switching operation between two signals at different wavelengths is reported using the optical bistability occurring in two different semiconductor laser amplifiers. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. Switching of a signal beam by another control beam at different wavelength is reported experimentally with a 1550 nm distributed feedback semiconductor optical amplifier. Also, a theoretical model has been generated to analyze the wavelength switching operation with a novel amplifier type--the 1550 nm vertical cavity semiconductor optical amplifier (VCSOA). Using a 1550 nm VCSOA, wavelength switching operation is reported with a calculated input power below 1 μW. This low input power requirement for switching added to the high-frequency response of the VCSOA, and the ease of fabricating 2D arrays of these devices due to the vertical structure, makes the VCSOA a very interesting device for use in optical switching applications in the optical telecommunication networks.

DOI
10.1364/jon.6.000434

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Feature Issue on Photonics in SwitchingTwo-wavelength switching operation between two signals at different wavelengths is reported using the optical bistability occurring in two different semiconductor laser amplifiers. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. Switching of a signal beam by another control beam at different wavelength is reported experimentally with a 1550 nm distributed feedback semiconductor optical amplifier. Also, a theoretical model has been generated to analyze the wavelength switching operation with a novel amplifier type--the 1550 nm vertical cavity semiconductor optical amplifier (VCSOA). Using a 1550 nm VCSOA, wavelength switching operation is reported with a calculated input power below 1 μW. This low input power requirement for switching added to the high-frequency response of the VCSOA, and the ease of fabricating 2D arrays of these devices due to the vertical structure, makes the VCSOA a very interesting device for use in optical switching applications in the optical telecommunication networks.
Switching of a signal beam by another control beam at different wavelength is demonstrated experimentally using the optical bistability occurring in a 1.55 µm-distributed feedback semiconductor optical amplifier (DFBSOA) working in reflection. Counterclockwise (S-shaped) and reverse (clockwise) bistability are observed in the output of the control and the signal beam respectively, as the power of the input control signal is increased. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. The switching properties of the DFBSOA are studied experimentally as the applied bias current is increased from below to above threshold and for different levels of optical power in the signal beam and different wavelength detunings between both input signals. Higher on-off extinction ratios, wider bistable loops and lower input power requirements for switching are obtained when the DFBSOA is operated slightly above its threshold value.
We report experimental measurements of Optical Bistability (OB) and nonlinear switching in a 1550 nm-Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection and biased below and above its threshold current. Two different types of OB and nonlinear switching, anticlockwise and clockwise, have been observed in both the optical power and wavelength domain. The influence of important parameters including the bias current, the initial wavelength detuning and the optical input power has also been studied. The existence of diverse forms of OB and nonlinear switching in a VCSOA operated in reflection opens the door for the development of inverting and non-inverting logic gates, using, respectively, the anticlockwise or the clockwise nonlinear switching transitions appearing in the VCSOA under external optical injection.
Switching of a signal beam by another control beam at different wavelength is demonstrated experimentally using the optical bistability occurring in a 1.55 mm-distributed feedback semiconductor optical amplifier (DFBSOA) working in reflection. Counterclockwise (S-shaped) and reverse (clockwise) bistability are observed in the output of the control and the signal beam respectively, as the power of the input control signal is increased. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. The switching properties of the DFBSOA are studied experimentally as the applied bias current is increased from below to above threshold and for different levels of optical power in the signal beam and different wavelength detunings between both input signals. Higher on-off extinction ratios, wider bistable loops and lower input power requirements for switching are obtained when the DFBSOA is operated slightly above its threshold value.
We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.