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Conference on Lasers and Electro-Optics

Tailoring Quantum-Correlated Two-Photon Transitions to Excitons in Semiconductor Quantum Wells

David Guzmán, Luis J. Salazar, Ferney J. Rodríguez, Luis Quiroga

Published Jan 1, 2012• 0 citations
Publisher

Abstract

Dependence of excitonic two-photon absorption on the quantum correlations of exciting biphotons in a semiconductor quantum well is studied. We found that exciton oscillator strengths increase when photons arrive simultaneously in entangled states.
DOI
10.1364/qels.2012.qm3g.6

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The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.
Two-photon absorption spectroscopy was performed in GaAs quantum wells with photon energy \ensuremath{\Elzxh}\ensuremath{\omega} near half the band gap Eg{\mathrm{E}}_{\mathrm{g}}Eg​. For the case of incident light polarized perpendicular to the confinement direction \ensuremath{\epsilon}^\ensuremath{\perp}z^, the onset of two-photon absorption occurs at the 2P state of the lowest-energy heavy-hole exciton and the absorption increases linearly with 2\ensuremath{\Elzxh}\ensuremath{\omega}-Eg{\mathrm{E}}_{\mathrm{g}}Eg​. For \ensuremath{\epsilon}^\ensuremath{\parallel}z^, the two-photon spectrum is stepped with superpositions of sharp 1S exciton features at odd \ensuremath{\Delta}N light-hole--conduction-band transitions. These results are used to accurately determine exciton binding energy, successive subband energy splittings, and band offsets.
We calculate two-photon transition rates of exciton states in GaAs quantum wells for varying well widths. The exciton states are described in the effective-mass approximation and are obtained variationally assuming wave functions that are separable in the r coordinates. The two-photon transition rate is calculated taking explicitly into account the sum over all the intermediate states, using a variational procedure. We calculate transition rates of excitons of s symmetry as well as of p symmetry, which are allowed for polarization of the radiation beam along the growth axis and in the layer planes, respectively. From our calculations we find that transitions to s-type excitons have sufficiently large rates to be observable, whereas transitions to p-type excitons seem to have rates too small to be observable; these results are in agreement with experiment. The transition rate of s excitons increases significantly for decreasing well width, whereas the transition rate of p excitons is found to be almost independent of the well width. Moreover, our model allows us to calculate transition rates for photons of different energy. We have shown the resonant enhancement of the transition rate of s-type excitons when one of the photon energies approaches the energy of an intermediate state.