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Applied Physics Letters

Superconducting single photon detectors made by local oxidation with an atomic force microscope

Cécile Delacour, Julien Claudon, J.-Ph. Poizat, B. Pannetier, Vincent Bouchiat, R. Espiau de Lamaëstre, J.C. Villégier, Michael A. Tarkhov, Alexander A. Korneev, B. Voronov, G. N. Gol'Tsman

Published May 7, 2007• 31 citations
Publisher

Abstract

The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.

DOI
10.1063/1.2738195

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The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.
We have fabricated and tested single photon detectors based on a current biased superconducting niobium nanowire patterned into a meander. The detectors are fabricated from high quality, ultra high vacuum sputtered niobium thin films on a sapphire substrate. For detection of single optical photons, we show that the superconductor's intrinsic kinetic inductance does not limit the reset time of the detector, which is ≈ 2 nanoseconds, in contrast to the longer reset times seen in niobium nitride detectors of similar size and geometry. We also describe a readout scheme for photon counting that is unique to Nb due to its lower resistivity. These detectors have applications in imaging of infrared photoemission from CMOS logic circuits as well as in optical communications and quantum information processing.
Abstract. We describe the collective fabrication and characterization of superconducting single photon detectors (SSPD) made of a superconducting NbN meander, suitable for near-infrared applications. The NbN layer acting as the photon absorber is deposited epitaxially on a three inch diameter R-plane Sapphire heated substrate by DC-Magnetron sputtering from a Nb target in a reactive mixture of nitrogen and argon gas. Very thin NbN (~4 nm) films superconducting up to 12 K with a rather large critical current density are in-situ covered by a 1.4 nm thick room temperature sputtered AlN layer protecting NbN from oxidation. Two reliable patterning processes has been developed successfully, one based on electron beam lithography, the second based on selective NbN film anodization under an AFM tip. The filling factor obtained with 150 nm wide stripes in the meander pixel is about 0.5 with e-beam lithography and improved up to 0.8 with AFM patterning. In order to achieve an improved optical coupling of the SSPD by using wafers integrating ion implanted IR waveguides, growth studies of NbN layers have been focused on R-plane Sapphire and silicon substrates. We present optical and superconducting properties of NbN layers by FTIR, ellipsometry and STM.
High-quality ultrathin films of niobium nitride (NbN) are developed by the plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors patterned from this material exhibit high switching currents and saturated internal efficiencies over a broad bias range at a telecommunication wavelength of 1550 nm. Statistical analyses on hundreds of fabricated devices show a near-unity throughput yield due to the exceptional homogeneity of the films. The ALD-NbN material represents an ideal superconducting material for fabricating large single-photon detector arrays combining high efficiency, low jitter, and low dark counts.
Superconducting detectors have become essential devices for high-performance single-photon counting over a wide wavelength range with excellent time resolution. Detector fabrication typically relies on resist-based lithography processes, which can limit possibilities for device integration, e.g., on unconventional substrates. Here, we demonstrate a resist-free fabrication route for realizing superconducting nanowire single-photon detectors based on focused electron beam-induced deposition. Utilizing direct writing of a Pt–C mask, we achieved nanowire meanders with linewidths below 100 nm, operated them as superconducting devices for the detection of visible and near-infrared photons, and showed detector integration on side-polished optical fibers. Being compatible with device fabrication on curved irregular surfaces, our approach could enable superconducting detector integration in complex configurations.
Abstract This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO 2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s −1 at liquid helium temperature.