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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Superconducting niobium nanowire single photon detectors

Anthony J. Annunziata, A. Frydman, Matthew O. Reese, Luigi Frunzio, Michael J. Rooks, D. E. Prober

Published Oct 18, 2006• 14 citations
Publisher

Abstract

We have fabricated and tested single photon detectors based on a current biased superconducting niobium nanowire patterned into a meander. The detectors are fabricated from high quality, ultra high vacuum sputtered niobium thin films on a sapphire substrate. For detection of single optical photons, we show that the superconductor's intrinsic kinetic inductance does not limit the reset time of the detector, which is ≈ 2 nanoseconds, in contrast to the longer reset times seen in niobium nitride detectors of similar size and geometry. We also describe a readout scheme for photon counting that is unique to Nb due to its lower resistivity. These detectors have applications in imaging of infrared photoemission from CMOS logic circuits as well as in optical communications and quantum information processing.

DOI
10.1117/12.686301

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We have fabricated and tested single photon detectors based on a current biased superconducting niobium nanowire patterned into a meander. The detectors are fabricated from high quality, ultra high vacuum sputtered niobium thin films on a sapphire substrate. For detection of single optical photons, we show that the superconductor's intrinsic kinetic inductance does not limit the reset time of the detector, which is ≈ 2 nanoseconds, in contrast to the longer reset times seen in niobium nitride detectors of similar size and geometry. We also describe a readout scheme for photon counting that is unique to Nb due to its lower resistivity. These detectors have applications in imaging of infrared photoemission from CMOS logic circuits as well as in optical communications and quantum information processing.
We investigate the performance of superconducting nanowire photon detectors fabricated from ultra-thin Nb. A direct comparison is made between these detectors and similar nanowire detectors fabricated from NbN. We find that Nb detectors are significantly more susceptible than NbN to thermal instability (latching) at high bias. We show that the devices can be stabilized by reducing the input resistance of the readout. Nb detectors optimized in this way are shown to have approximately 2/3 the reset time of similar large-active-area NbN detectors of the same geometry, with approximately 6% detection efficiency for single photons at 470 nm.
Single photon detectors have been fabricated NbN nano wire. These detectors are fabricated from high quality, ultra high vacuum sputtered NbN thin films on a sapphire substrate. In this work a typical schematic of the nanowire Single Photon Detector structure and then driving and measurement electronic circuit are shown. The response of superconducting nanowire single photon detectors during a photo detection event, is modeled by a special electrical circuits (two circuit). Finally, current through the wire is calculated by solving equations of models.
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the first use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit a high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realizing large arrays of on-chip SNSPDs and their integration with AlN-based χ(2) quantum photonic circuits.
We present high performance fiber-coupled niobium titanium nitride superconducting nanowire single photon detectors fabricated on thermally oxidized silicon substrates. By applying a double sided cavity structure, simulated absorptance in the nanowire meander reached 97% at 1550 nm wavelength. The fabricated device showed a system detection efficiency (DE) of 74% at 1550 nm, dark count rate of 100 c/s, and a full width at half maximum timing jitter of 68 ps under a bias current of 18.0 μA with a practical Gifford-McMahon cryocooler system.
We report on superconducting single-photon detectors (SSPDs) based on NbN nanowires and their application to single-photon measurements at telecom wavelengths. The detectors are realized by patterning ultra thin (3 - 5 nm-thick) NbN films into meanders of 100 nm-wide wires. The films are deposited by DC magnetron sputtering at relatively low temperatures (≈500 °C) on MgO and GaAs substrates (as compared to the approach of high-temperature deposition on sapphire). In 5 nm-thick films, TCsas high as 10 K and 11 K have been obtained on GaAs and MgO, respectively (Fig. 1). SSPDs have been fabricated by a two-mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO. The detectors are 5 × 5 μm2in size, and composed of a 100 μm long, 100 nm wide nanowire folded in a meander pattern with filling factor of 40%. Typical room temperature resistivity ρ is of 190 μΩ·cm, and I-V curves at 4.2 K show a critical current density JCof about 6 MA·cm-2, which are state of the art values. Quantum efficiency (QE) was measured illuminating the detectors mounted in a liquid He bath through an optical fiber. Quantum efficiencies >10% are measured at 4.2 K, comparable to best results on sapphire substrates. In particular, SSPDs show a large increase in sensitivity, temporal resolution and maximum counting frequencies as compared to InGaAs avalanche photodiodes.