Temperature switch based on optical bistability

J.A. Hermann

Vyacheslav A. Trofimov

The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.

Jiaye Chen, Xiaogang Liu

Dezhen Shen, Xiwu Fan, Baojun Yang Baojun Yang

The optical bistability with picosecond switching time in ZnS-ZnTe/GaAs multiple quantum wells (MQWs) on reflection at room temperature has been studied for the first time. The research results indicate that the switching threshold from high to low state and contrast ratio for the optical bistability are about 1.2 MW/cm2 and 3:1, respectively. The major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the band filling effect.

Jonathan M. Ward, Danny G. O’Shea, Brian Shortt +1 more

We experimentally demonstrate optical bistability in Er3+-Yb3+ phosphate glass microspheres at 295 K. Bistability is associated with both Er3+ fluorescence and lasing behavior, and chromatic switching. The chromatic switching results from an intrinsic mechanism exploiting the thermal coupling of closely spaced energy levels, and occurs simultaneously with the intensity switching. A contrast ratio of 2.8 has been obtained for chromatic switching. The intensity switching shows ratios of 21 for 520 nm and 11 for 660 nm fluorescence emissions, and 11 for IR lasing at 1.5 μm. Concurrent with these observations, we investigate a temperature-dependent absorption of pump power, which exhibits bistable behavior. The influences of the host matrix on lasing and fluorescence mechanisms are highlighted.

Lorenzo M. Narducci, James D. Farina, L. Benza