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Journal of Applied Physics

Noise properties of granular NbN Josephson microbridges

J. H. Claassen

Published May 1, 1984• 3 citations
Publisher

Abstract

The output noise of a granular NbN microbridge has been measured at frequencies near 25 MHz as a function of bias voltage, temperature, and rf bias at 70 GHz. It is generally greater than predicted by the resistively shunted junction model, but is significantly lower than has previously been observed in clean superconducting microbridges with comparable RIc products. An estimate of the performance of the device as a Josephson mixer at 70 GHz is made on the basis of these measurements. At an operating temperature of 10 K a double sideband mixer noise temperature ∼200 K, with conversion loss of ∼3 dB should be attainable. Using the noise as a probe of the average temperature within the microbridge, it is found that simple self-heating is not a likely explanation for the disappearance of Josephson effects at high dc or microwave bias.

DOI
10.1063/1.333375

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We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V>I/sub C/R/sub N/), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.>

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Noise in Josepson effect mixers and the RSJ model

R. J. Schoelkopf, Tom G. Phillips, Jonas Stasys Zmuidzinas

Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.

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The testing of NbN(g) nanobridges with Al direct shunt resistors for use as millimeter-wave Josephson mixers is discussed. The NbN(g)/Al nanobridges have a nearly sinusoidal current-phase relation, high resistance, well-defined gap structure at approximately 4 mV, large I/sub J/ R/sub N/ products of approximately 3 mV, and nonhysteresis I-V curves. By means of the Al direct shunt, the effective noise temperature T/sub N//sup eff/ of the NbN(g) nanobridges, which was calculated by transition-state theory, was reduced to 4.2 K as a result of reducing the self-heating and noise rounding effects. The NbN(g)/Al nanobridges show almost ideal Josephson response to millimeter-wave radiation at 106 GHz. The well-pronounced Josephson steps were observed up to approximately 4 mV. The observed systematic decreasing of the step heights with increasing the RF current can be accounted for by the effect of the thermal noise if an effective noise temperature of T/sub N/=15 K (at i/sub RF/=3) is assumed. The IF peaks in the Josephson mixing were obtained up to the bias voltage of approximately 1.2 mV. The NEP was about 3*10/sup -20/ W/Hz at 4.2 K.

IEEE Transactions on Magnetics•Mar 1, 1991•6 citations
The output noise of a granular NbN microbridge has been measured at frequencies near 25 MHz as a function of bias voltage, temperature, and rf bias at 70 GHz. It is generally greater than predicted by the resistively shunted junction model, but is significantly lower than has previously been observed in clean superconducting microbridges with comparable RIc products. An estimate of the performance of the device as a Josephson mixer at 70 GHz is made on the basis of these measurements. At an operating temperature of 10 K a double sideband mixer noise temperature ∼200 K, with conversion loss of ∼3 dB should be attainable. Using the noise as a probe of the average temperature within the microbridge, it is found that simple self-heating is not a likely explanation for the disappearance of Josephson effects at high dc or microwave bias.
High resistance granular NbN microbridges with submicron dimensions have been fabricated and investigated. Devices with critical currents less than 5 microamps and bridge resistances of the order of 50 ohms have been studied as a function of temperature at both zero and finite voltages. The current‐voltage characteristics were measured with various levels of applied radiation in the frequency range 11–40 GHz. For these frequencies, constant voltage‐current steps were observed at the Josephson frequency, 2eV/h for low applied voltages, at higher voltages the radiation induced step spacing deviated from that of ideal Josephson behavior. Additional current steps were also observed at temperatures just above the bridge Tc where no finite critical current could be dected. These effects and other characteristics observed on the I‐V curves will be reported and discussed.
We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V>I/sub C/R/sub N/), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.>
We present test results of a 100 GHz waveguide receiver using resistively-shunted Nb and NbN tunnel junctions. These junctions were fabricated with a process similar to that used previously with Nb junctions [1], which produces non-hysteretic devices with normal-state resistances of 30-50 Ohms, and IcRiz products of 0.5-0.75 mV. The best receiver temperature obtained to date with NbN is 270 K (DSB) with 6-7 dB of conversion loss. A receiver temperature of 390 K (DSB) was previously obtained with Nb junctions; these devices showed qualitative agreement with the predictions of the simple DC and RF current-biased RSJ model. The improvement in receiver performance is probably due to improved RF coupling of the junctions, and due to the higher IcRn products of NbN. However, these NbN devices display different pumped I-V curves and IF power curves than predicted by the RSJ model. We show that these effects can be caused by the strong interaction of the junction with the embedding circuit, and conclude that an accurate model of the impedance presented to the junction will have to be included in the RSJ simulations to compare with the observed performance. Fourth International Symposium on Space Terahertz Technology Page 443 Introduction We are studying the performance of Josephson-effect mixers using resistivelyshunted tunnel junctions in order to develop a better understanding of their behavior, the sources of noise and its limitation, and to determine how to optimize their performance. Also, we wish to compare the observed behavior and performance with the theoretical predictions of the so-called RSJ (resistively shunted junction) model, so that there will be a guide to the expected performance for different frequency regimes and device parameters. This work may be important as high-Tc SNS devices become available [P.A. Rosenthal and E.N. Grossman, these proceedings] with large Ic h?„ products, for they provide the possibility of using Josephson mixers at frequencies in the terahertz range, above the range where SIS mixers are currently available. In contrast, due to the extremely short coherence lengths of the high-Tc materials, junctions suitable for quasiparticle (SIS) mixers may not be feasible with these materials Device Fabrication We have applied the technique used for creating non-hysteretic Nb Josephson devices[1] to NbN/MgO/NbN tunnel junctions. First the junction tfilayer is fabricated, then the junction areas are patterned by electron-beam lithography and subsequently etched using reactive-ion etching (RJE) in the standard method [3]. After planarization of the etched area with evaporated SiO, a AuGe resistor is fabricated on top of the SiO, and the junction and resistor are then contacted with another layer of NbN. A photomicrograph of a completed Nb junction is shown in Figure la. Since the bottom of the etched trilayer lies under the resistor, it acts as a ground plane, and the resistor structure can be analyzed as a lossy transmission line. The impedance of this short microstrip structure is purely real, even up to frequencies comparable to the gap frequency of the superconductor, thus providing the desired broadband shunt. However, the section of Page 444 Fourth International Symposium on Space Terahertz Technology superconductor which contacts the junction and resistor creates a non-negligible parasitic capacitance when compared to the very small area tunnel junctions used, and therefore the area of this contact pad must be kept to a minimum. From a knowledge of the geometry and thickness of the insulator (Si0), we estimate this parasitic capacitance to be 7-8 fF. Shunting of the junction is necessary to reduce the McCumber beta parameter (Pc = 2eIcRN C Ih) of the unshunted tunnel junctions. Junctions with /3, values greater than one have hysteretic I-V curves [4], and their dynamics can be complicated, including the possibility of chaos. Reduction of 13, is accomplished by resistive shunting, which reduces /3 by the square of the ratio of the initial junction resistance to the final resistance of the parallel combination of the junction and the resistive shunt. However, this shunting has the undesirable effect of reducing the 1,Rn product of the junction. For the NbN junctions used, the critical current density was about 331cA/cm 2 , and the specific capacitance is estimated to be about 150/F 1 itm [5], giving an unshunted of about 12. Thus the optimal shunted junction for these parameters would have a shunt resistance of about one-fourth of R,„ and thus an IcR7, reduced from the unshunted value of 3.0 mV to 0.8 mV. In order to maintain high enough resistances for the final device, very small (0.3pm on a side) area junctions must be used, and the parasitic capacitance will be comparable to the junction capacitance. This further reduces the final IeR, product attainable. The I-V curve of a typical device is shown in Figure lb. This device had a critical current of 11 microamps and a normal state resistance of 39 Ohms, giving an IcR, product of 430 microvolts. The IV curve is nonhysteretic and follows the RSJ model. Mixer Modelling Mixer performance can be predicted using the RSJ model, in a method similar to that used by Taur[6], but extended to the case of finite junction capacitance. The
Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.
Abstract To reduce the self‐heating effect and thermal noise in bridge‐type Josephson mixers, all‐NbN nanobridges with an Al “direct shunt” resistor were fabricated. This paper describes the millimeter‐wave response and mixing properties of the NbN(g)/Al nanobridge‐type Josephson mixers in the 100‐GHz frequency. The effective noise temperature TNeff of the nanobridges was decreased to the bath temperature (liquid helium temperature, 4.2 K) by the Al “direct shunt” resistor and the millimeter‐wave induced steps were clearly observed at higher voltage (∼4 mV) than in the nanobridge without the Al “direct shunt” resistor. The millimeter‐wave current dependence of the height of the millimeter‐wave induced steps was analyzed quantitatively, taking into account the thermal noise in the RSCJ model. The simulated result agreed with the experimental result very well. The systematic decrease of the induced step height with an increase of millimeter‐wave current was explained as the increase of effective noise temperature due to absorption of millimeter‐wave power. In the 100‐GHz Josephson mixing experiment, a large IF power output was obtained at a voltage up to about 1.6 mV. The effective noise power NEP and conversion efficiency were about 3 × 10−20 W/Hz and 0.2, respectively.
The testing of NbN(g) nanobridges with Al direct shunt resistors for use as millimeter-wave Josephson mixers is discussed. The NbN(g)/Al nanobridges have a nearly sinusoidal current-phase relation, high resistance, well-defined gap structure at approximately 4 mV, large I/sub J/ R/sub N/ products of approximately 3 mV, and nonhysteresis I-V curves. By means of the Al direct shunt, the effective noise temperature T/sub N//sup eff/ of the NbN(g) nanobridges, which was calculated by transition-state theory, was reduced to 4.2 K as a result of reducing the self-heating and noise rounding effects. The NbN(g)/Al nanobridges show almost ideal Josephson response to millimeter-wave radiation at 106 GHz. The well-pronounced Josephson steps were observed up to approximately 4 mV. The observed systematic decreasing of the step heights with increasing the RF current can be accounted for by the effect of the thermal noise if an effective noise temperature of T/sub N/=15 K (at i/sub RF/=3) is assumed. The IF peaks in the Josephson mixing were obtained up to the bias voltage of approximately 1.2 mV. The NEP was about 3*10/sup -20/ W/Hz at 4.2 K.