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physica status solidi (b)

Third‐harmonic generation in a quantum well with adjustable asymmetry under an electric field

Hasan Yıldırım, M. Tomak

Published Aug 31, 2006• 36 citations
Publisher

Abstract

Abstract We study third‐harmonic generation in a quantum well represented by a Pöschl–Teller confining potential under an applied electric field. This potential is well suited for such purposes as it can easily become asymmetrical by a correct choice of its parameter set. We calculate the third harmonic generation within the density matrix formalism. Numerical results for a typical GaAs quantum well are presented. We investigate the third‐harmonic generation for several values of asymmetry parameters under small electric fields. It is found to be enhanced with the increasing electric field. While the resulting third‐harmonic generation peak is promising it is still quite smaller than that observed in similar quantum well systems. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

DOI
10.1002/pssb.200642079

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Abstract We study third‐harmonic generation in a quantum well represented by a Pöschl–Teller confining potential under an applied electric field. This potential is well suited for such purposes as it can easily become asymmetrical by a correct choice of its parameter set. We calculate the third harmonic generation within the density matrix formalism. Numerical results for a typical GaAs quantum well are presented. We investigate the third‐harmonic generation for several values of asymmetry parameters under small electric fields. It is found to be enhanced with the increasing electric field. While the resulting third‐harmonic generation peak is promising it is still quite smaller than that observed in similar quantum well systems. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Abstract In the current work, we have studied the second and third harmonic generation in asymmetrical Gaussian potential quantum dot subjected to the applied electric field. To do this, confined wave function together with energies of electron in an effective mass approximation framework were obtained. Apply these, the analytic expression for the second- and third harmonic generation are determined using a compact density matrix approach and an iterative procedure. According to the results, it is found that applying an electric field, enhances the peak values of the second- and third harmonic generation and redshifts the peak position of their spectrum. Our calculations indicate that increases the radius of quantum dot causes enhances the values of -harmonic generation and redshifts the peak positions of photon energy. It means by optimizing the confinement potential, the maximum –harmonic generation can be obtained. It should be noted that the structural parameters have a significant effect on the –harmonic generation in the considered system.
Abstract By using the displacement harmonic variant method and the compact density matrix approach, the linear and nonlinear intersubband refractive‐index changes (RICs) in a semiparabolic quantum well (QW) with an applied electric field have been investigated in detail. Simple analytical formulae for the linear and nonlinear RICs in the system were also deduced. The effect of the band nonparabolicity has been taken into account. Numerical calculations of typical GaAs semiparabolic QWs were performed. The dependence of the linear and nonlinear RICs on the incident optical intensity, the frequency of the confined potential of the semiparabolic quantum well, and the strength of the applied electric field were discussed under both conditions of considering and ignoring the band nonparabolicity. Results reveal that the RICs in the semiparabolic quantum‐well system sensitively depend on these factors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.
The nonlinear optical properties of semiconductor heterostructures, such as GaAsAl/GaAs alloys, are studied with analytic and numerical methods on the basis of quantum mechanics. Particularly, second and third-order nonlinear optical properties of quantum wells described by the various types of confining potentials are considered within the density matrix formalism. We consider a Pöschl-Teller type potential which has been rarely considered in this area. It has a tunable asymmetry parameter, making it a good candidate to investigate the effect of the asymmetry on the nonlinear optical properties. The calculated nonlinear quantities include nonlinear absorption coefficient, second-harmonic generation, optical rectification, third-harmonic generation and the intensity-dependent refractive index. The effects of the DC electric field on the corresponding nonlinearities are also studied. The results are in good agreement with the results obtained in other types of quantum wells, such as square and parabolic quantum wells. The effects of the Coulomb interaction among the electrons on the nonlinear intersubband absorption are considered within the rotating wave approximation. The result is applied to a Si-delta-doped, square quantum well in which the Coulomb interaction among the electrons are relatively important, since there has been no work on the nonlinear absorption spectrum of the Si-\delta-doped quantum well. The results are found to be new and interesting, especially when a DC electric field is included in the calculations.
Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.
Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems.