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Physica E Low-dimensional Systems and Nanostructures

Rabi oscillation damping of two-level states in quantum dots

Dmitri S. Mogilevtsev, A.P. Nisovtsev, S. Ya. Kilin, Solange Bessa Cavalcanti, Humberto Siqueira Brandi, L. E. Oliveira

Published Sep 22, 2007• 3 citations
Publisher
DOI
10.1016/j.physe.2007.09.057

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The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed.
We develop a realistic model of Rabi oscillations in a quantum-dot photodiode. Based in a multiexciton density matrix formulation we show that for short pulses the two-level model fails and higher levels should be taken into account. This affects some of the experimental conclusions, such as the inferred efficiency of the state rotation (population inversion) and the deduced value of the dipole interaction. We also show that the damping observed cannot be explained using constant rates with fixed pulse duration. We demonstrate that the damping observed is in fact induced by an off-resonant excitation to or from the continuum of wetting layer states. Our model describes the nonlinear decoherence behavior observed in recent experiments.
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