The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
The polarization dependence of the ultrafast nonlinear response of localized excitons in GaAs/AlGaAs quantum wells has been investigated by spectrally resolved, transient four-wave mixing. The role of the excitation-induced dephasing in the delay dependence of the signal is discussed in detail. In particular, we show experimentally that the excitation-induced dephasing gives rise to a photon echo in inhomogeneous systems. We develop a simple analytical model for the delay dependence of the signal, which enables us to deduce the dephasing time from the four-wave mixing decay.
A picosecond time-resolved four-wave mixing technique is used to study the dephasing of nonlinear optical resonances in CdSe. At low temperature strong coherent, nonlinear signals at the free exciton resonance, at the biexciton resonance, and at the exciton-biexciton transition are observed. The observed correlation traces, i.e. the diffracted intensity versus the delay between the interfering light pulses, yield information on the dephasing process. Dephasing times for excitons as long as 40 ps, decreasing with increasing excitation density and temperature, are observed. A two-level model is applied to describe theoretically the dynamical behavior of the resonances, and to extract their homogeneous broadening, as well as their inhomogeneous broadening.
The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$
Sex and
Alx${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$
Sex while the dephasing time in
Alx${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As amounts to only a few picoseconds. In ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$
Sex dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$
Sex. In contrast, in
Alx${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in ${\mathrm{CdS}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$
Sex and
Alx${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.
A theoretical investigation of the effects of static disorder on the linear optical response and the degenerate four-wave-mixing signals of multiple quantum well Bragg structures is presented. It is shown that disorder leads to a finite radiative coupling strength of subradiant modes that are optically forbidden in the ideal structure. In the absorption spectrum, the subradiant modes appear as sharp resonances in the presence of barrier thickness fluctuations, whereas the disorder induced subradiant modes are inhomogeneously broadened in the presence of interface roughness. The decay of the time integrated four-wave-mixing signal at large delays is determined by the dephasing time of subradiant modes, whereas the initial fast decay is dominated by the superradiant mode. A free induction decay is observed in the presence of barrier thickness fluctuations. In contrast, even a small inhomogeneous broadening induces a photon-echo-like behavior for the subradiant modes, while the superradiant mode still exhibits a free induction decay.
A theoretical investigation of the effects of static disorder on the linear optical response and the degenerate four-wave-mixing signals of multiple quantum well Bragg structures is presented. It is shown that disorder leads to a finite radiative coupling strength of subradiant modes that are optically forbidden in the ideal structure. In the absorption spectrum, the subradiant modes appear as sharp resonances in the presence of barrier thickness fluctuations, whereas the disorder induced subradiant modes are inhomogeneously broadened in the presence of interface roughness. The decay of the time integrated four-wave-mixing signal at large delays is determined by the dephasing time of subradiant modes, whereas the initial fast decay is dominated by the superradiant mode. A free induction decay is observed in the presence of barrier thickness fluctuations. In contrast, even a small inhomogeneous broadening induces a photon-echo-like behavior for the subradiant modes, while the superradiant mode still exhibits a free induction decay.