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IEEE Journal of Quantum Electronics

Optical nonlinearities and phase coherence in CdSe studied by transient four-wave mixing

Claus Dörnfeld, J. M. Hvam

Published May 1, 1989• 86 citations
Publisher

Abstract

A picosecond time-resolved four-wave mixing technique is used to study the dephasing of nonlinear optical resonances in CdSe. At low temperature strong coherent, nonlinear signals at the free exciton resonance, at the biexciton resonance, and at the exciton-biexciton transition are observed. The observed correlation traces, i.e. the diffracted intensity versus the delay between the interfering light pulses, yield information on the dephasing process. Dephasing times for excitons as long as 40 ps, decreasing with increasing excitation density and temperature, are observed. A two-level model is applied to describe theoretically the dynamical behavior of the resonances, and to extract their homogeneous broadening, as well as their inhomogeneous broadening.

DOI
10.1109/3.27979

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A picosecond time-resolved four-wave mixing technique is used to study the dephasing of nonlinear optical resonances in CdSe. At low temperature strong coherent, nonlinear signals at the free exciton resonance, at the biexciton resonance, and at the exciton-biexciton transition are observed. The observed correlation traces, i.e. the diffracted intensity versus the delay between the interfering light pulses, yield information on the dephasing process. Dephasing times for excitons as long as 40 ps, decreasing with increasing excitation density and temperature, are observed. A two-level model is applied to describe theoretically the dynamical behavior of the resonances, and to extract their homogeneous broadening, as well as their inhomogeneous broadening.
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The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four decades, many interesting phenomena related to the dynamics and the nonlinear optical properties of excitons in semiconductors and their nanostructures in the coherent and incoherent regimes are still to be explored. This thesis presents our effort to study the nonlinear optical properties as well as the exciton dynamics in coherent and incoherent regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs quantum dots (QDs). We have set up several time-resolved and steady-state optical spectroscopic measurement techniques in our laboratory to carry out our study on excitons dynamics in semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely, the lock-in detection, spectral selection by the monochromator and time-integration at the slow photodetector. We have used the formalism of optical Bloch equations conventionally used to analyse wave mixing experiments. Our analysis puts the pump-probe technique on the same footing as the wave mixing experiments. We show that pumpprobe experiments can be used to study both coherent and incoherent dynamics. We also present a clear physical picture of the measured signal using the Lorentz harmonic oscillator model. We report the investigation of the coherent exciton dephasing dynamics using pumpprobe reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of the dephasing rate of the excitons with increasing exciton density due to exciton-exciton scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density and at low lattice temperature is larger than the corresponding dephasing rate of the 17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report that the dephasing rates for both QWs are linear with the sample temperature below the 30 K. We report the study of ionization equilibrium between the exciton and the electronhole plasma population in the temperature and pressure (excitation density) phase space. Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole plasma. We investigate this ionization equilibrium using steady state photoluminescence and time-resolved excitation correlation PL measurements. We present a clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its connection with the Mott transition is discussed. Semiconductor nanocrystals and QDs are another important area of research, mainly due to their huge potential for device application. We present a simple model which combines carrier loss kinetics, detailed balance principle in thermodynamic equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour of the experimental data.
Abstract This paper studies coherent excitons in the presence of alloy disorder by femtosecond degenerate four‐wave mixing on ternary (ZnCd)Se/ZnSe quantum wells. The use of very low excitation densities enables to uncover an impurity‐mediated exciton dephasing time of (16 ± 2) ps and a related homogeneous exciton width of only 80 μeV. At higher densities, the coherence loss speeds up dramatically due to exciton‐exciton interaction. Separating the contributions from inhomogeneous (photon echo) and homogeneous broadening to the spectrally resolved decay transients allows to deduce the energy dependence of the dephasing time across the disorder broadened exciton ensemble. Further, pronounced biexciton resonances are observed in the signal spectrum which exhibit characteristic polarization properties. For cross‐polarized pulses, the biexciton signal shows a striking stimulation when the excitation density is increased.