We present the RF characterization of 2-µm-wide superconducting coplanar waveguides made of 100-nm-thick niobium (Nb) or niobium nitride (NbN) films fabricated on 200 mm silicon wafers. Measurements of the two-ports S-parameters up to 25 GHz in a 4.7K–14 K temperature range with an added direct current up to 115 mA were done using a cryogenic probe station. With proper RF calibration and de-embedding procedure, both temperature and dc current dependence of the RF superconducting properties are analyzed. We report a kinetic inductance of 0.15 pH/
□, a critical current density of 50 MA/cm
2, and a critical temperature of 8.9 K for Nb as well as 4.27 pH/
□, 3 MA/cm
2, and 13.8 K for NbN. A telegraphist transmission line model taking into account the BCS theory has been developed and the comparison with the measurements is discussed.
We investigated superconducting NbN nanowire as a photo switch for generating single flux quantum (SFQ) pulses. Epitaxially grown NbN thin films were prepared on MgO(100) substrates by a dc magnetron sputtering method using gas mixture of Ar+N 2 , without substrate heating. NbN thin films showed Tc of 13.6 K for 8 nm, and 10 K for 4 nm. NbN nanowires were patterned using a electron beam lithography with 200 nm thick electron beam resist. To increasing photo-sensitive regions, we fabricated 50 × 50 μm 2 meander patterns with NbN nanowires. Line width of nanowires was varied from 150 nm to 500 nm. Critical current density of NbN nanowires was about 3 × 10 6 A/cm 2 at 4.2 K. We irradiated 850-nm laser pulses via 50-μm multi-mode optical fibers. Repetition frequency and pulse width could be controlled by a pulse pattern generator. The maximum laser pulse power was about 1 mW. Using 150-nm-wide NbN nanowires, half of critical current was suppressed by 1 mW CW laser irradiations. High speed responses were observed for laser pulses with repetition frequency of 1 MHz and pulse width of 2 ns. Besides the NbN nanowire photo switches, we designed an SFQ interface circuit based on Josephson transmission lines. The designed circuit could generate SFQ pulses by input current of 10 μA, 25 GHz current pulses. Dc bias margin of the circuit was ±15% for 60 μA current pulses.