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Physical review. B, Condensed matter

Spectral Zeeman hole burning in a quantum dot ensemble

Gang Chen, E. T. Batteh, Duncan G. Steel, D. Gammon, Douglas Scott Katzer

Published Sep 11, 2003• 3 citations
Publisher

Abstract

Spectral hole burning experiments based on high-resolution magneto-CW four-wave mixing in the phase conjugate geometry show that both the spectral and spatial diffusion of excitons is negligible in the GaAs quantum dot system formed by interface disorder. Due to the strong Coulomb coupling, Zeeman spectral hole burning is observed when we resonantly excite one of the two orthogonally polarized excitons confined to each dot by two copolarized and frequency-degenerate fields and then probe the system by a third beam that is of opposite polarization and a Zeeman splitting away (in frequency). The experiments allow for a measure of the exciton decay rates and g factor.

DOI
10.1103/physrevb.68.115303

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Spectral hole burning experiments based on high-resolution magneto-CW four-wave mixing in the phase conjugate geometry show that both the spectral and spatial diffusion of excitons is negligible in the GaAs quantum dot system formed by interface disorder. Due to the strong Coulomb coupling, Zeeman spectral hole burning is observed when we resonantly excite one of the two orthogonally polarized excitons confined to each dot by two copolarized and frequency-degenerate fields and then probe the system by a third beam that is of opposite polarization and a Zeeman splitting away (in frequency). The experiments allow for a measure of the exciton decay rates and g factor.
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.
Persistent spectral-hole-burning (PSHB) phenomena have been observed in many kinds of semiconductor quantum dots (QDs). Luminescence hole burning and charged excitons have been observed in CuCl QDs in NaCl crystals. The observed PSHB phenomena are explained by the ionization of QDs. The energy of photoionized QDs is changed from the original energy and their new energies depend on the spatial arrangement of trapped carriers. Quantum confinement of carriers and the resulting strong Coulomb interaction between confined carriers and trapped carriers cause the energy change. PSHB has been widely applied to site-selective spectroscopy of QDs. Size-dependent excited exciton quantum states in CuCl quantum cubes, size-dependent excited electron-hole quantum states in CdTe QDs and renormalization of longitudinal optical phonons confined in CuCl QDs have been revealed by studying sideband holes. This also allowed the measurement of accumulated photon echo, which clarified the very sharp homogeneous spectral linewidth of QDs under weak excitation conditions.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
We report the observation of dressed states of a quantum dot. The optically excited exciton and biexciton states of the quantum dot are coupled by a strong laser field and the resulting spectral signatures are measured using differential transmission of a probe field. We demonstrate that the anisotropic electron-hole exchange interaction induced splitting between the x- and y-polarized excitonic states can be completely erased by using the ac-Stark effect induced by the coupling field, without causing any appreciable broadening of the spectral lines. We also show that by varying the polarization and strength of a resonant coupling field, we can effectively change the polarization axis of the quantum dot.