Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical review. B, Condensed matter

Electric-field-induced Mott metal-insulator transition

Ryuichi Ugajin

Published Apr 15, 1996• 27 citations
Publisher

Abstract

The Mott metal-insulator transition induced by an external electric field is discussed based on an analysis of a double-layered two-dimensional lattice model. A sharp transition between a metallic phase with the antiferromagnetic order and a Mott insulating phase is found to be driven by the voltage difference between the two layers. A sharp metal-insulator transition is transformed to a smooth metal-insulator transition by a change in the coupling between sites This model is applicable to a Mott transition in a two-dimensional array of very small quantum dots whose shape is asymmetric in the direction perpendicular to the substrate. \textcopyright{} 1996 The American Physical Society.

DOI
10.1103/physrevb.53.10141

Related papers

Electron-Density Fluctuation in a Mott Transition Induced by an External Electric Field

Ryuichi Ugajin

An addition spectral analysis on a finite cluster from the double-layered lattice model, which has been introduced to describe quantum dot arrays under an external electric field perpendicular to the array, is presented. When the density of electrons is near to quarter-filled, we found a new type of Mott transition, in which the metal-insulator transition goes through a heavy-electron phase. In this new Mott transition, the Mott insulating state becomes unstable because Gibbs states having more pairs of electrons are favored as well as the Mott insulating state, resulting in an enhancement of electron-density fluctuation.

Journal of the Physical Society of Japan•Dec 15, 1996•7 citations

Electric-field-induced shift of the Mott metal-insulator transition in thin films

Davoud Nasr Esfahani, Lucian Covaci, François Maria Peeters

The ground-state properties of a paramagnetic Mott insulator at half-filling are investigated in the presence of an external electric field using the inhomogeneous Gutzwiller approximation for a single-band Hubbard model in a slab geometry. We find that the metal-insulator transition is shifted toward higher Hubbard repulsions by applying an electric field perpendicular to the slab. The main reason is the accumulation of charges near the surface. The spatial distribution of site-dependent quasiparticle weight shows that it is maximal in a few layers beneath the surface, while the central sites where the field is screened have a very low quasiparticle weight. Our results show that above a critical-field value, states near the surface will be metallic, while the bulk quasiparticle weight is extremely suppressed but never vanishing, even for large Hubbard repulsions above the bulk zero-field critical value. Below the critical-field value, our results hint toward an insulating state in which the electric field is totally screened and the slab is again at half-filling.

arXiv:1109.0857•Physical Review B•Feb 14, 2012•4 citations

Quantum Monte Carlo Study of an Interaction-Driven Band-Insulator–to–Metal Transition

Norman Paris, Karim Bouadim, F. Hébert +2 more

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two-dimensional square lattice using determinant quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity demonstrates that the metallic region extends for a finite range of interaction values. The Mott phase at strong coupling is accompanied by antiferromagnetic order. Inclusion of these intersite correlations changes the phase diagram qualitatively compared to dynamical mean field theory.

arXiv:cond-mat/0607707•Physical Review Letters•Jan 25, 2007•102 citations

Interaction-driven Band-insulator--to--Metal transition in bilayer ionic Hubbard model

Mi Jiang, T. C. Schulthess

The interaction-driven insulator-to-metal transition has been reported in the ionic Hubbard model (IHM) for moderate interaction $U$, while its metallic phase only occupies a narrow region in the phase diagram. To explore the enlargement of the metallic regime, we extend the ionic Hubbard model to two coupled layers and study the interplay of interlayer hybridization $V$ and two types of intralayer staggered potentials $Δ$: one with the same (in-phase) and the other with a $π$-phase shift (anti-phase) potential between layers. Our determinant Quantum Monte Carlo (DQMC) simulations at lowest accessible temperatures demonstrate that the interaction-driven metallic phase between Mott and band insulators expands in the $Δ-V$ phase diagram of bilayer IHM only for in-phase ionic potentials; while anti-phase potential always induces an insulator with charge density order. This implies possible further extension of the ionic Hubbard model from the bilayer case here to realistic three-dimensional model.

arXiv:1604.03271•Apr 12, 2016•1 citation

Correlation driven Mott-insulator-to-metal transition

Rubem Mondaini, Thereza Paiva

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to calculate the double occupation, effective hopping and Drude weight. These data point to two phase transitions, driven by fermionic correlations. The first is the expected metal to a Mott insulating state. The second one, is an exotic transition from a Mott insulating state to a highly anisotropic metal, that takes place at large values of the fermion-fermion interaction. This second transition occurs when the layers formed by the spatially varying interactions decouple due to the suppression of the hopping between interacting and non-interacting sites, leading to fermionic transport along the non-interacting ones.

arXiv:1303.7369•Mar 29, 2013•0 citations

Mott metal-insulator transition in the half-filled Hubbard model on the triangular lattice

Massimo Capone, Luca Capriotti, Federico Becca +1 more

We investigate the metal-insulator transition in the half-filled Hubbard model on the two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique and an exact numerical diagonalization of finite clusters. Contrary to the case of a square lattice, where a perfect nesting of the Fermi surface leads to a metal-insulator transition at arbitrarily small values of U, always accompanied by antiferromagnetic ordering, on a triangular lattice, due to the lack of perfect nesting, the transition takes place at a finite value of U, and frustration induces a nontrivial competition among different magnetic phases. Indeed, within the mean-field approximation in the slave-boson approach, as the interaction grows the paramagnetic metal turns into a metallic phase with incommensurate spiral ordering. Increasing the interaction further, a linear spin-density wave is stabilized, and finally for strong coupling the latter phase undergoes a first-order transition toward an antiferromagnetic insulator. No trace of the intermediate phases is seen in the exact diagonalization results, indicating a transition between a paramagnetic metal and an antiferromagnetic insulator.

arXiv:cond-mat/0006437•Physical review. B, Condensed matter•Feb 2, 2001•51 citations
The Mott metal-insulator transition induced by an external electric field is discussed based on an analysis of a double-layered two-dimensional lattice model. A sharp transition between a metallic phase with the antiferromagnetic order and a Mott insulating phase is found to be driven by the voltage difference between the two layers. A sharp metal-insulator transition is transformed to a smooth metal-insulator transition by a change in the coupling between sites This model is applicable to a Mott transition in a two-dimensional array of very small quantum dots whose shape is asymmetric in the direction perpendicular to the substrate. \textcopyright{} 1996 The American Physical Society.
An addition spectral analysis on a finite cluster from the double-layered lattice model, which has been introduced to describe quantum dot arrays under an external electric field perpendicular to the array, is presented. When the density of electrons is near to quarter-filled, we found a new type of Mott transition, in which the metal-insulator transition goes through a heavy-electron phase. In this new Mott transition, the Mott insulating state becomes unstable because Gibbs states having more pairs of electrons are favored as well as the Mott insulating state, resulting in an enhancement of electron-density fluctuation.
The ground-state properties of a paramagnetic Mott insulator at half-filling are investigated in the presence of an external electric field using the inhomogeneous Gutzwiller approximation for a single-band Hubbard model in a slab geometry. We find that the metal-insulator transition is shifted toward higher Hubbard repulsions by applying an electric field perpendicular to the slab. The main reason is the accumulation of charges near the surface. The spatial distribution of site-dependent quasiparticle weight shows that it is maximal in a few layers beneath the surface, while the central sites where the field is screened have a very low quasiparticle weight. Our results show that above a critical-field value, states near the surface will be metallic, while the bulk quasiparticle weight is extremely suppressed but never vanishing, even for large Hubbard repulsions above the bulk zero-field critical value. Below the critical-field value, our results hint toward an insulating state in which the electric field is totally screened and the slab is again at half-filling.
We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two-dimensional square lattice using determinant quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity demonstrates that the metallic region extends for a finite range of interaction values. The Mott phase at strong coupling is accompanied by antiferromagnetic order. Inclusion of these intersite correlations changes the phase diagram qualitatively compared to dynamical mean field theory.
The interaction-driven insulator-to-metal transition has been reported in the ionic Hubbard model (IHM) for moderate interaction UUU, while its metallic phase only occupies a narrow region in the phase diagram. To explore the enlargement of the metallic regime, we extend the ionic Hubbard model to two coupled layers and study the interplay of interlayer hybridization VVV and two types of intralayer staggered potentials ΔΔΔ: one with the same (in-phase) and the other with a πππ-phase shift (anti-phase) potential between layers. Our determinant Quantum Monte Carlo (DQMC) simulations at lowest accessible temperatures demonstrate that the interaction-driven metallic phase between Mott and band insulators expands in the Δ−VΔ-VΔ−V phase diagram of bilayer IHM only for in-phase ionic potentials; while anti-phase potential always induces an insulator with charge density order. This implies possible further extension of the ionic Hubbard model from the bilayer case here to realistic three-dimensional model.
We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to calculate the double occupation, effective hopping and Drude weight. These data point to two phase transitions, driven by fermionic correlations. The first is the expected metal to a Mott insulating state. The second one, is an exotic transition from a Mott insulating state to a highly anisotropic metal, that takes place at large values of the fermion-fermion interaction. This second transition occurs when the layers formed by the spatially varying interactions decouple due to the suppression of the hopping between interacting and non-interacting sites, leading to fermionic transport along the non-interacting ones.
We investigate the metal-insulator transition in the half-filled Hubbard model on the two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique and an exact numerical diagonalization of finite clusters. Contrary to the case of a square lattice, where a perfect nesting of the Fermi surface leads to a metal-insulator transition at arbitrarily small values of U, always accompanied by antiferromagnetic ordering, on a triangular lattice, due to the lack of perfect nesting, the transition takes place at a finite value of U, and frustration induces a nontrivial competition among different magnetic phases. Indeed, within the mean-field approximation in the slave-boson approach, as the interaction grows the paramagnetic metal turns into a metallic phase with incommensurate spiral ordering. Increasing the interaction further, a linear spin-density wave is stabilized, and finally for strong coupling the latter phase undergoes a first-order transition toward an antiferromagnetic insulator. No trace of the intermediate phases is seen in the exact diagonalization results, indicating a transition between a paramagnetic metal and an antiferromagnetic insulator.