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Journal of the Physical Society of Japan

Optical Hole-Burning Properties of Sm2+-Doped Strontium Borates

Seongtae Park, Kiwan Jang, Il-Gon Kim, Yong‐Ill Lee, Hyo Jin Seo

Published May 12, 2006• 3 citations
Publisher

Abstract

Two kinds of Sm-doped Strontium Borates, SrB 4 O 7 (STB) and SrB 6 O 10 (SHB), were prepared for the spectral hole-burning experiment. Sm 3+ -ions doped into the STB were well reduced to Sm 2+ -ions in air environment. Though partial reduction was observed in SHB, the Sm 3+ -ions successfully reduced in the subsequent X-ray irradiation (SHBX). Permanent spectral hole-burning experiments were conducted for 7 F 0 – 5 D 1 transition band of Sm 2+ -ions. The two samples STB and SHBX showed deep spectral holes at room temperature and 50 K, i.e., 40 and 72% of hole depths in STB and SHBX at 50 K, respectively. The STB showed type I hole-burning properties and SHBX type II. The spectral holes were sustained for over 24 h at room temperature. Multiple holes were burnt in an inhomogeneously broadened band to demonstrate the optical data storage in the frequency domain.

DOI
10.1143/jpsj.75.054709

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Two kinds of Sm-doped Strontium Borates, SrB 4 O 7 (STB) and SrB 6 O 10 (SHB), were prepared for the spectral hole-burning experiment. Sm 3+ -ions doped into the STB were well reduced to Sm 2+ -ions in air environment. Though partial reduction was observed in SHB, the Sm 3+ -ions successfully reduced in the subsequent X-ray irradiation (SHBX). Permanent spectral hole-burning experiments were conducted for 7 F 0 – 5 D 1 transition band of Sm 2+ -ions. The two samples STB and SHBX showed deep spectral holes at room temperature and 50 K, i.e., 40 and 72% of hole depths in STB and SHBX at 50 K, respectively. The STB showed type I hole-burning properties and SHBX type II. The spectral holes were sustained for over 24 h at room temperature. Multiple holes were burnt in an inhomogeneously broadened band to demonstrate the optical data storage in the frequency domain.
Recently, the interests in optical memory based on persistent spectral hole burning (PSHB) are increased because of its possibility of the application to high density optical memory. PSHB was observed for an organic dye doped in polymer and rear earth or transition metal doped in inorganic crystal or glasses up to now. Since PSHB was observed by two Russian groups (Gorokhovskii et al. and Kharlamov et al.) for free base phthalocyanine in a n-octane Shpol'skii matrix1 and for perylene and 9-aminoacridine molecules in glassy ethanol matrix2, PSHB materials are studied primarily for the polymer doped with an organic dye. But such materials can make hole only at very low temperature. Room temperature PSHB phenomena were observed on Sm2+ doped fluoride crystals3-5 and glasses6 recently, however these materials' Гih(inhomogeneous line width)/Гh(homogeneous line width)'s which are the parameters of data multiplicity in PSHB optical memory are an order of unity. For the application of PSHB materials to optical memory, high operating temperature, high Гih/Гh, and rapid reaction rate are wanted. Glass has a superiority on the view point of optical memory application because of its broad inhomogeneous line width and productivity. Our group has discovered room temperature PSHB for Sm2+ in borate glass systems whose Гih/Гh is 24.7 PSHB for rear earth metal in glass matrix has not been studied seriously, yet. It is thought that the study of the relationship between the optical hole and glass structure is necessary.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.
For next generation high density optical storage, extensive studies on persistent spectral hole burning (PSHB) have been performed, because they have a large potential for a high density frequency-domain optical data storage. PSHB has been observed at room temperature in Sm-doped crystals and glasses. Among them, glasses are considered to be more favorable than single crystals, due to their wide inhomogeneous line width and easy process for mass production. In the study, we developed a new glass mixture which shows room temperature PSHB with a inhomogeneous line width broadened up to 70 cm/sup -1/. The PSHB was characterized by investigating the time decay pattern of fluorescence and the excitation spectra.
Photon gated spectral hole-burning was first observed in a samarium doped crystal, BaFCl:Sm2+ [1]. This material was of interest to the developement of optical memories as the holes were found to be stable to room temperature thermal cycling. Holes could be burnt at liquid helium temperatures but as the temperature was raised the line quickly became homogeneously broadened. The addition of bromine to the melt succeeded in broadening the inhomogeneous linewidths to about 2 nm through substitutional disorder [2] and persistent holes were observed at 77 K [3]. Subsequently, a study of the parameters for spectral hole-burning in a BaFCl0.5Br0.5:Sm2+ crystalline powder was performed [4] and the highest temperature for which persistent hole-burning had been observed was raised to 133 K. Here we report spectral hole-burning at room temperature (figure 1) in a related compound, Sr0.5Mg0.5FCl0.5Br0.5:Sm2+.