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Applied Physics Letters

Demonstration of the independence of absorptive all-optical bistabilities in reflection and luminescence

B. Ullrich, Algirdas Kazlauskas, Toyohide Kobayashi

Published Mar 27, 1995• 5 citations
Publisher

Abstract

The dependence on the source location of photothermal bistabilities of a thin CdS:Cu film is demonstrated by the investigation of bistability in luminescence in reflection geometry. Particularly, it is shown that the infrared portion in the reflected beam clearly exhibits contrasting bistable loops in contrast to the reflection itself. The unexpected effect is explained by the fact that bistability in luminescence is a bulk feature which is not affected by the surface region.

DOI
10.1063/1.113861

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The dependence on the source location of photothermal bistabilities of a thin CdS:Cu film is demonstrated by the investigation of bistability in luminescence in reflection geometry. Particularly, it is shown that the infrared portion in the reflected beam clearly exhibits contrasting bistable loops in contrast to the reflection itself. The unexpected effect is explained by the fact that bistability in luminescence is a bulk feature which is not affected by the surface region.
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Recently, we have discovered that the excitation of thin CdS films with the 514.5 nm line causes an all-optical bistable luminescent emission in the near infrared part of the spectrum. A first insight in mechanism and origin of all-optical bistability in luminescence of semiconductors is presented. We show that the initial and final states of the bistable luminescence are determined by the thermal properties of the luminescence intensity of the thin CdS film. However, during the bistable switch of the luminescence thermal effects and electronic ones take place. Thus, all-optical bistability in luminescence is a thermally induced electronic bistability.
All-optical bistability in luminescence of thin (⩽ 10 μm) CdS and CdS: Cu sprayed films on pyrex® was studied in the range of 700-1000 nm. The films were investigated between 80-210 K and excited by the 514.5 nm Ar + - laser line. The measurements were performed in transmission or reflection geometries using a monochromator or cut-off filters, respectively. The pronounced dependence of the luminescence intensity on temperature in the near infrared is found to be the origin of bistability in luminescence. Furthermore, we demonstrate that the loop contrasts depend on the wavelength investigated. By the application of this feature, we present, to the best of our knowledge for the first time, a possibility to measure doping concentrations of a semiconductor with a bistable device. Finally, new concepts are discussed to use luminescence bistability in all-optical or hybrid data links.
First reports of absorptive all-optical bistabilities in reflectance and luminescence of a Fabry-Perot cavity consisting of thin (0.70 ,cem) ZnSe film are presented. We demonstrate that the observation of bistability in the reflected beam does not require necessarily the appearance of bistability in the transmitted beam. Luminescence bistabilities, however, are observed both in the light captured Lrom the incident side 0L the film and in the light emitted from the transmission side. The bistabilities in reflection and luminescence are explained quite satisfactorily by the principle of increasing absorption due to photo-irradiation and the dependence of the luminescence intensity on a photo-thermally induced temperature change, respectively. A11 experiments were carried out at room temperature with the 488 nm line of an argon laser.
Besides the well-known phenomenon of bistability in transmission, the excitation of thin ( 5.5 µm) CdS films by the 514.5 nm A r +-laser line generates all-optical bistability in luminescence in the near-infrared region of the spectrum. With the application of this feature, the determination of the type of impurities, donors or acceptors in GaAs is possible. The novel method proposed here underlies the principle that differently contrasting bistable loops in luminescence are clearly observed if n-type, intrinsic or p-type GaAs wafers are used as cut-off filters for the bistable luminescent emission of thin CdS films.