Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Autler-Townes splitting of excitons and biexcitons in semiconductors
P. I. Khadzhi, L. Yu. Nad’kin, D. V. Tkachenko
Abstract
The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M-band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler-Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.