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Physics of the Solid State

Optical properties of a semiconductor in the exciton spectral region under exposure to a high-power pump pulse in the M-band region

P. I. Khadzhi, L. Yu. Nad’kin

Published Dec 1, 2005• 3 citations
Publisher

Abstract

The behavior of the dielectric susceptibility of a semiconductor is studied in the case where the exciton state is probed by weak-pulse photons in the presence of a high-power laser pulse in the region of the M band of CuCl luminescence. A pronounced Autler-Townes effect for the exciton transition is shown to occur. The absorption peak position is determined by the amplitude and frequency of the pump field.

DOI
10.1134/1.2142884

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Physical review. B./Physical review. B•Nov 28, 2016•4 citations
The behavior of the dielectric susceptibility of a semiconductor is studied in the case where the exciton state is probed by weak-pulse photons in the presence of a high-power laser pulse in the region of the M band of CuCl luminescence. A pronounced Autler-Townes effect for the exciton transition is shown to occur. The absorption peak position is determined by the amplitude and frequency of the pump field.
The hysteretical behavior of imaginary and real parts of the semiconductor susceptibility in the exciton range of spectrum taking into account the exciton-photon and elastic exciton- exciton interaction in the pump-probe regime depending on the intensity and frequency of the strong pump laser pulse and on the frequency of the test pulse is studied. The conditions of the emergence of the damping suppression and test pulse gain are determined. The abrupt red and blue shifts of the spectral position of the exciton absorption band depending on the intensity of the pump pulse are predicted.
We measured the optical transitions due to the internal energy levels of an exciton and biexciton in a CuCl single crystal using pump-probe spectroscopy. The transient absorption bands due to the transitions from the 1s1s1s to 2p2p2p and from the 1s1s1s to 3p3p3p exciton states were observed at 3 K, which is consistent with their reported energies. Simultaneously, the transient absorption peak due to the biexciton was observed, which corresponds to a transition from the lowest state (composed of two 1s1s1s excitons) to higher states (composed of 1s1s1s and 2p2p2p excitons). The value of the observed biexciton peak energy was reasonable considering the hydrogen molecule orbitals and the electron-to-hole effective mass ratio. In addition, the transient absorption peaks were broadened at 77 K, because of the increase in the homogeneous width of the 2p2p2p exciton state. The transient absorption spectrum was almost completely determined by this width. Our findings are of importance with regard to the optical phenomena in the infrared region related to the quantum coherence of excitons and biexcitons in semiconductors.