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IEEE International Conference on Advanced Infocomm Technology

All-optical switching using cesium two-photon transition

Chin‐Chun Tsai, Yi-Chi Lee, Hsiang‐Chen Chui

Published Jul 1, 2013• 0 citations
Publisher

Abstract

New scheme of a real-time all-optical switching (AOS) was demonstrated as the florescence signal of cesium two-photon transition (TPT) with the control field. This work explored the optical phenomenon of the TPT with the control field that shares a common excited state, in which the TPT fluorescence quenched under the control field intensity. A “NOT gate” is generated for realization of AOS. The power spectrum of the intensity range which can be used for the AOS is determined.

DOI
10.1109/icait.2013.6621567

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New scheme of a real-time all-optical switching (AOS) was demonstrated as the florescence signal of cesium two-photon transition (TPT) with the control field. This work explored the optical phenomenon of the TPT with the control field that shares a common excited state, in which the TPT fluorescence quenched under the control field intensity. A “NOT gate” is generated for realization of AOS. The power spectrum of the intensity range which can be used for the AOS is determined.
New scheme of a real-time all-optical switching (AOS) was demonstrated as the fluorescence signal of cesium two-photon transition (TPT) with the control field. This work explored the optical phenomenon of the TPT with the control field that shares a common excited state, in which the TPT fluorescence is quenched under the control field intensity. The strong stimulated emission due to the control laser suppresses the TPT fluorescence, working as an optical switch. A “NOT gate” is generated for realization of AOS. The power spectrum of the intensity range, which can be used for the AOS, is determined.
The probability of two-photon transition (TPT) under a control field to inhibit the quantum interference and enhance the nonlinear optical cross section is observed. Essentially, this is a V-type electromagnetically induced transparency (EIT) with TPT instead of one photon transition. Numerical simulation based on solving the steady state density matrix can qualitatively fit the experimental data. A model of double-Lorentzian profile is used to fit the observed spectrum and give the de-convolution information of the inhibition of TPT spectrum due to EIT and enhancement on the wings of TPT. The frequency shift of the inhibit center is linear to the intensity of the control field (one-photon) and quadratic to the intensity of probe field (two-photon). Under the control field, a factor of 10 enhancements on the wings of the TPT is observed.
We experimentally demonstrate an all-optical switching (AOS) scheme based on double slow light (DSL) pulses, in which one pulse is switched by another due to the cross-Kerr nonlinearity. The interaction time is prolonged by optically dense atomic media and matched group velocities. The interaction strength is maintained at a high level by keeping both fields at their electromagnetically-induced-transparency resonances to minimize the linear loss. In the AOS without the DSL scheme, the group velocity mismatch sets an upper limit on the switching efficiency of two photons per atomic cross section as discussed by Harris and Hau [Phys. Rev. Lett. 82, 4611 (1999)]. Compared to that limit, we have obtained an enhanced switching efficiency by a factor of 3 with our DSL scheme. The nonlinear efficiency can be further improved by increasing the optical depth of the medium. Our work advances low-light-level nonlinear optics and provides essential ingredients for quantum many-body physics using strongly interacting photons.
All-optical switching (AOS) or cross-phase modulation (XPM) based on the effect of electromagnetically induced transparency (EIT) makes one photon switched or phase-modulated by another possible. The existence of four-wave mixing (FWM) process greatly diminishes the switching or phase-modulation efficiency and hinders the single-photon operation. We proposed and experimentally demonstrated an idea that with an optimum detuning the EIT-based AOS can be completely intact even under the influence of FWM. The results of the work can be directly applied to the EIT-based XPM. Our work makes the AOS and XPM schemes more flexible and the single-photon operation possible in FWM-allowed systems.
We propose all-optical switching schemes using a single three-level atomic system placed within a 3D photonic crystal that exhibits a complete 3D photonic band gap. The optical schemes we propose can be classified into two types with respect to a physical process that causes the switching effect. One switching type is mediated by changing an atom-field coupling strength. The other switching type is mediated by controlling quantum interference. Furthermore, we consider conditions of realizing a wide range of signals, which contributes to an improvement of the Signal to Noise ratio. The phases and strengths of the external laser fields required for the all-optical switching are revealed. Next, we estimate their switching times. Using these results, we propose the fastest scheme for every configuration of the atomic system, which is important for realizing a high-speed optical memory or switching device on an atomic scale that can be used in novel optical integrated systems, such as quantum computers.
We describe all-optical transistor action in photonic band gap materials doped with active atoms. In the presence of a photonic band gap (PBG) material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By changing the laser field intensity in the neighborhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The switching action in a PBG material is not associated with operating near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analyzing the absorption spectrum of a second probe laser beam and we show that the probe beam experience a substantial differential gain by slight intensity modulations in the control laser field.