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Physical Review Letters

Optically Driven Spin Memory in n -Doped InAs-GaAs Quantum Dots

S. Cortez, O. Krebs, S. Laurent, Mathieu Sénès, X. Marie, Paul H. Voisin, R. Ferreira, G. Bastard, Jean‐Michel Gérard, T. Amand

Published Oct 28, 2002• 250 citations
Publisher

Abstract

We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
DOI
10.1103/physrevlett.89.207401

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