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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Time-correlated single-photon counting with superconducting single-photon detectors

Martin J. Stevens, Robert H. Hadfield, Robert E. Schwall, Sae Woo Nam, Richard P. Mirin

Published Oct 18, 2006• 7 citations
Publisher

Abstract

We report use of a niobium nitride superconducting single-photon detector in a time-correlated single-photon counting experiment. The detector has a timing jitter of 68 ± 3 ps full width at half maximum with a Gaussian temporal profile. The detector's dark count rate and detection efficiency can be tuned by adjusting the bias current applied to the device. Typical values include a detection efficiency of ~1-2% and a dark count rate below 100 Hz. We use this detector to measure time-resolved photoluminescence at wavelengths up to 1650 nm, well beyond the range of conventional silicon detectors. We also use this superconducting detector to measure the emission of a quantum dot single-photon source.

DOI
10.1117/12.685447

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We report use of a niobium nitride superconducting single-photon detector in a time-correlated single-photon counting experiment. The detector has a timing jitter of 68 ± 3 ps full width at half maximum with a Gaussian temporal profile. The detector's dark count rate and detection efficiency can be tuned by adjusting the bias current applied to the device. Typical values include a detection efficiency of ~1-2% and a dark count rate below 100 Hz. We use this detector to measure time-resolved photoluminescence at wavelengths up to 1650 nm, well beyond the range of conventional silicon detectors. We also use this superconducting detector to measure the emission of a quantum dot single-photon source.
Superconducting single photon detectors (SSPD) based on nanopatterned niobium nitride wires offer single photon counting at fast rates, low jitter, and low dark counts, from visible wavelengths well into the infrared. We demonstrate the first use of an SSPD, packaged in a commercial cryocooler, for single photon source characterization. The source is an optically pumped, microcavity-coupled InGaAs quantum dot, emitting single photons at 902 nm. The SSPD replaces the second silicon Avalanche Photodiode (APD) in a Hanbury-Brown Twiss interferometer measurement of the source second-order correlation function, g(2)( ?). The detection efficiency of the superconducting detector system is >2 % (coupling losses included). The SSPD system electronics jitter is 170 ps, versus 550 ps for the APD unit, allowing the source spontaneous emission lifetime to be measured with improved resolution.
Time resolution is one of the main characteristics of the single photon detectors besides quantum efficiency and dark count rate. We demonstrate here an ultrafast time-correlated single photon counting (TCSPC) setup consisting of a newly developed single photon counting board SPC-150NX and a superconducting NbN single photon detector with a sensitive area of 7 × 7 μm. The combination delivers a record instrument response function with a full width at half maximum of 17.8 ps and system quantum efficiency ∼15% at wavelength of 1560 nm. A calculation of the root mean square value of the timing jitter for channels with counts more than 1% of the peak value yielded about 7.6 ps. The setup has also good timing stability of the detector-TCSPC board.
We present high performance fiber-coupled niobium titanium nitride superconducting nanowire single photon detectors fabricated on thermally oxidized silicon substrates. By applying a double sided cavity structure, simulated absorptance in the nanowire meander reached 97% at 1550 nm wavelength. The fabricated device showed a system detection efficiency (DE) of 74% at 1550 nm, dark count rate of 100 c/s, and a full width at half maximum timing jitter of 68 ps under a bias current of 18.0 μA with a practical Gifford-McMahon cryocooler system.
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation,g(2)g^{(2)}g(2)(0), is less than 0.260$\pm0.024fortemperaturesupto100K.At120K,0.024 for temperatures up to 100 K. At 120 K,0.024fortemperaturesupto100K.At120K,g^{(2)}(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. In addition, we characterize the performance of a superconducting single photon detector (SSPD) based on a nanopatterned niobium nitride wire that exhibits 68(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68\pm3−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto23-ps timing jitter and less than 100-Hz dark count rate with a detection efficiency (DE) of up to 2% at 902 nm. This detector is used to measure spontaneous emission lifetimes of semiconductor quantum wells (QWs) emitting light at wavelengths of 935 and 1245 nm. The sensitivity to wavelengths longer than 13−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto2\mumandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandam and the Gaussian temporal response of this superconducting detector present clear advantages over the conventional detector technologies. We also use this detector to characterize the emission from a single InGaAs QD embedded in a micropillar cavity, measuring a spontaneous emission lifetime of 370 ps and amandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandag^{(2)}(0)of0.24(0) of 0.24(0)of0.24\pm$0.03.
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.