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IEEE Journal of Selected Topics in Quantum Electronics

Fabrication Process Yielding Saturated Nanowire Single-Photon Detectors With 24-ps Jitter

Faraz Najafi, Andrew E. Dane, Francesco Bellei, Qingyuan Zhao, Kristen A. Sunter, Adam N. McCaughan, Karl K. Berggren

Published Dec 12, 2014• 40 citations
Publisher

Abstract

We present an optimized fabrication process for superconducting nanowire single-photon detectors that allowed us to obtain a yield of ~70% for detectors based on 80-nm-wide niobium nitride nanowires. We fabricated detectors that showed 24-ps timing jitter and saturated detection efficiency without the need for cryogenic amplifiers, allowing for operation in a low-bias low-dark-count-rate regime while operating at maximum detection efficiency.

DOI
10.1109/jstqe.2014.2372054

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We present an optimized fabrication process for superconducting nanowire single-photon detectors that allowed us to obtain a yield of ~70% for detectors based on 80-nm-wide niobium nitride nanowires. We fabricated detectors that showed 24-ps timing jitter and saturated detection efficiency without the need for cryogenic amplifiers, allowing for operation in a low-bias low-dark-count-rate regime while operating at maximum detection efficiency.
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.
Nbx_xx​Ti1−x_{1-x}1−x​N low timing jitter single-photon detectors with unity internal efficiency at 1550 nm and 2.5 K
The requirements in quantum optics experiments for high single photon detection efficiency, low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow to reach the best timing jitter, but in turn have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of NbxTi1-xN superconducting films, and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 μm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency, and with a FWHM timing jitter as low as 19.47 ps.
We present high performance fiber-coupled niobium titanium nitride superconducting nanowire single photon detectors fabricated on thermally oxidized silicon substrates. By applying a double sided cavity structure, simulated absorptance in the nanowire meander reached 97% at 1550 nm wavelength. The fabricated device showed a system detection efficiency (DE) of 74% at 1550 nm, dark count rate of 100 c/s, and a full width at half maximum timing jitter of 68 ps under a bias current of 18.0 μA with a practical Gifford-McMahon cryocooler system.
Superconducting nanowire single photon detectors (SNSPDs) have demonstrated advantages over traditional detectors in many fields [1]. Most fiber-coupled SNSPDs are coupled to single mode fibers, limiting their usability for applications where large surface area detectors are needed, for example fluorescence detection and satellite-based quantum communication [2][3]. Other important requirements for many applications are broadband detection efficiency, and low timing jitter [4]. So far, the increased meander length of multimode detectors, and the therefore increased kinetic inductance and number of imperfections due to film inhomogeneities have limited the timing jitter [5]. Moreover, combining low timing jitter with high detection efficiency and low dark count rate in one device is challenging due to the tradeoffs between different properties of SNSPDs [6]. In this paper, we achieved high efficiency and strong saturation over a broad wavelength range with a low timing jitter of 16.99 ps while maintaining a low dark count rate of < 0.2 Hz for an SNSPD coupled to a 50 µm core multimode fiber. To enhance the broadband absorption from 405 nm to 830 nm, detectors were fabricated on an optimized SiO2 cavity and Aluminum mirror. The geometry of the nanowire was also tuned to reach a good internal saturation of efficiency over the visible/NIR range but also to carry high current to get a large signal. Furthermore, a cryogenic readout amplifier was optimized to improve the signal to noise ratio and thus lead to high time resolution. Our devices can be readily used to enable higher resolution and faster quantum optics, bio-imaging, laser ranging and other optical experiments.
Superconducting nanowire single-photon detectors (SNSPDs) play a pivotal role in infrared single-photon-detection applications owing to their free-running mode, near-unity detection efficiency, and excellent time resolution. However, conventional niobium nitride- (NbN) SNSPDs often have a trade-off between optimal detection efficiency and time resolution. We herein demonstrate NbN SNSPDs in the combination of high efficiency and time resolution by using the helium-ion-irradiated film of 10 nm and a homemade cryogenic amplifier to improve the signal-to-noise ratio. The proposed 18-μm-diameter device operated at 850 mK shows a saturated system detection efficiency of ∼90.5% at 1550 nm wavelength with a dark count rate below 50 counts per second (cps), and minimum system timing jitter of ∼14.7 ps. Meanwhile, the recovery time is 21.2 ns owing to its lower kinetic inductance. The time-of-flight light detection and ranging with this device was further carried out indoors, which demonstrates a submillimeter (<0.5 mm) depth resolution, as well as good depth and intensity reconstruction of a low-signature object even under the dwell time of 0.5 ms. It indicates that our device has a great advantage and potential in high-time-resolution and weak-signal-detection applications, such as real-time imaging, fluorescence lifetime detection, and remote laser sensing.