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Cryogenics

Design and applications of a very low losses superconducting LC resonator at 4.2 K

Frédéric Ayela, J-.L. Bret, J. Chaussy

Published Jan 1, 1992• 6 citations
Publisher
DOI
10.1016/0011-2275(92)90341-7

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Investigation of Dielectric Losses in Hydrogenated Amorphoussilicon (a-Si:H) thin Films Using Superconducting Microwave Resonators

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The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.

Physics Procedia•Jan 1, 2012•9 citations
We present an experimental investigation of lumped-element superconducting LC resonators designed to provide different types of coupling to a transmission line. We have designed four resonator geometries including dipole and quadrupole configured inductors connected in parallel with low-lossSiNx{\rm SiN}_{\rm x}SiNx​dielectric parallel-plate capacitors. The design of the resonator allows a change in the symmetry of the inductor or grounding of the capacitor to create LC resonators with: 1) inductive coupling, 2) capacitive coupling, 3) both types of coupling, or 4) greatly reduced coupling. We measured all four designs at a temperature of 30 mK at different values of power. We compare the extracted data from the four resonator types and find that both capacitive and inductive coupling can be included and that when nominally turned off, the coupling is greatly reduced from only minor changes in the circuit design. We also find a variation in the measured loss tangent of less than a few percent between the designs over a large range of internal quality factors, which are created by usingSiNx{\rm SiN}_{\rm x}SiNx​as a nonlinear lossy element within the capacitor.
The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.