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IEEE Transactions on Magnetics

Noise margins for Josephson logic and memory devices

Jaromír Kadlec

Published May 1, 1983• 9 citations
Publisher

Abstract

Noise which can produce erroneous transitions in Josephson logic devices can be treated in terms of the familiar model for thermal activation of a particle over a potential barrier. Noise curves are calculated which represent the effective threshold curves for a given transition rate; this approach can be applied to the mode-to-mode (superconducting) transitions as well as to the mode-to-voltage state switching. The analysis will be illustrated with the example of a three-junction current injection device. The practical consequences for design of Josephson logic circuits will be indicated.

DOI
10.1109/tmag.1983.1062340

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Noise which can produce erroneous transitions in Josephson logic devices can be treated in terms of the familiar model for thermal activation of a particle over a potential barrier. Noise curves are calculated which represent the effective threshold curves for a given transition rate; this approach can be applied to the mode-to-mode (superconducting) transitions as well as to the mode-to-voltage state switching. The analysis will be illustrated with the example of a three-junction current injection device. The practical consequences for design of Josephson logic circuits will be indicated.
Thermal noise induced switching of Josephson logic devices is studied, both theoretically and experimentally. The results are critical for the design of the operating bias points for these devices. An analysis of the relevant energy contours shows that a three-junction superconducting quantum interference device has the same noise switching rate as a point junction with the same maximum critical current. Experimental results, for the dependence of the thermal noise induced switching rate on the gate current bias ratio, are in very good agreement with the theory.
To measure the effect of thermal noise on switching a Josephson junction to the voltage state a simple SFQ circuit constructed with resistively shunted Nb/AlO/sub x//Nb junctions was used. Based on a good agreement between the measured data and the thermal activation theory, the effect of thermal noise on the bit error rate of SFQ devices was studied, The effective thermal noise temperature of 10 K used to fit the data was higher than the bath temperature of 4.2 K. Careful circuit design to get large critical margins is necessary to achieve high operating temperature of SFQ logic devices.
Superconducting quantum circuits (SQCs) are being explored as model systems for scalable quantum computing architectures. Josephson junctions are extensively used in superconducting quantum interference devices (SQUIDs) and in persistent-current qubit systems. Noise excitations, however, have a critical influence on their dynamics. Thus, the primary focus of this research was to investigate the effects of thermal ac-tivation on the superconducting properties of Josephson junctions. Specifically, ther-mal noise tends to result in a range of switching currents, values less than the critical current at which a junction switches from the superconducting to the normal state. First, a general review of superconductivity concepts is given, including a treatment of the Josephson phenomena. Next, I describe some of my work on characterizing the current-voltage traces of Josephson junctions tested at 4 K with a Multi-Chip Probe (MCP). Then, I describe thermal activation theory and examine the equations useful for modeling switching current distributions. The Josephson junctions of a SQUID with a ramped bias current were tested for numerous temperatures T < 4.5 K (and
A method of accurately estimating the I/sub 0/ (critical current) of a Josephson junction (JJ) with thermal noise was developed by measuring the effective thermal noise temperature of a JJ. The effective thermal noise temperature of various JJ devices was measured and calculated. The JJ devices evaluated included inductively and resistively coupled logic devices and JJ devices in the presence of various noise sources. The noise sources included room-temperature resistors, switched JJ devices, and JJ devices in the linear I-V region beyond the gap. The R/sub NN/ compensator is shown to result in a noise temperature of about 6 K at an interferometer. The addition of a shunt junction lessens the noise penalty introduced by the compensator. A switched isolation interferometer in a two-input AND gate contributes negligible noise at the injection device. It is also shown that bandwidth connections to room-temperature equipment result in very large excess noise and require special input and output circuits on the chip.>
Thermally induced vortex-to-vortex transitions between the zero-quantum vortex state and one- flux-quantum vortex state of a symmetric two-junction dc superconducting quantum interference device (SQUID) have been observed. The characterization of transitions of this type is an essential part of the modeling of Josephson junction logic and memory devices. The transition rates, measured as a function of bias current, applied flux, and temperature, are in excellent agreement with rates predicted by a thermal activation model for two-junction SQUID’s.
The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.