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Physica E Low-dimensional Systems and Nanostructures

Femtosecond pulse generation in quantum GaAs/InGaAs/GaAs heterostructures

Alla I. Klimovskaya, Yu. A. Driga, Evgeniy G. Gule, O.O. Pikaruk

Published Apr 1, 2003• 1 citation
Publisher
DOI
10.1016/s1386-9477(02)00878-0

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The spectra of spontaneous emission accompanying the generation of femtosecond superradiant pulses in GaAs/AlGaAs heterostructures are studied. It is clearly demonstrated that spontaneous emission spectra of electron–hole pairs, which have been left in the semiconductor after the formation of a coherent collective e–h state, correspond to the strong overheating of carriers. This phenomenon can be explained by the effect of dynamic cooling and nonequilibrium condensation of collectively paired carriers at the bottoms of the bands during the superradiant emission, which was observed earlier.
The effect of the nonstationary condensation of electron-hole pairs in GaAs/AlGaAs p-i-n heterostructures at room temperature under the conditions of generation of superradiance pulses was demonstrated in an explicit form. It was found that a dramatic decrease in spontaneous emission from the entire conduction band and a rapid electron transition to the very bottom of the band occurred at the earliest stages of the development of a superradiance pulse. The condensation of electrons at the band bottom resulted in the formation of a nonequilibrium coherent cooperative state, the recombination of which was observed previously as high-power femtosecond superradiance pulses.