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Journal of the Optical Society of America B

Femtosecond spectral hole burning in GaAs quantum wells

Wayne H. Knox, C. Hirlimann, David A. B. Miller, Jay Shah, D. S. Chemla, Charles V. Shank

Published Jan 1, 1986• 0 citations
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The dynamical spectral-hole-burning effect, due to selective saturation of the optically coupled states, has been observed in the femto-second regime in a GaAs/AlGaAs multiple quantum well structure. Comparison with previous results on bulk GaAs under similar excitation conditions shows that carrier-carrier collisions are about twice as efficient in the quantum wells, due to the reduction of screening efficiency in two-dimensional structures, as well as the increase of band-gap renormalization with respect to the bulk material.
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.