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IEEE Journal of Quantum Electronics

Resonant Dynamics of Nonlinear Optical Microdisks

Jonathan F. Holzman

Published Aug 16, 2007• 0 citations
Publisher

Abstract

An investigation into the relationship between two-photon-induced carrier dynamics and nonlinear optical resonance is carried out for an InP microdisk. A phenomenological model is developed and algebraic solutions are presented for the resulting bistability turn-on and turn-off transition points. It is shown that the offset between the operating wavelength and the un-illuminated resonance wavelength plays a critical role in defining the optical bus line intensity requirements at the input and the intensity contrast ratio at the output.

DOI
10.1109/jqe.2007.902383

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An investigation into the relationship between two-photon-induced carrier dynamics and nonlinear optical resonance is carried out for an InP microdisk. A phenomenological model is developed and algebraic solutions are presented for the resulting bistability turn-on and turn-off transition points. It is shown that the offset between the operating wavelength and the un-illuminated resonance wavelength plays a critical role in defining the optical bus line intensity requirements at the input and the intensity contrast ratio at the output.
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Direct time-domain observations are reported of a low-power, self-induced modulation of the transmitted optical power through a high-Q silicon microdisk resonator. Above a threshold input power of 60 microW the transmission versus wavelength deviates from a simple optical bistability behavior, and the transmission intensity becomes highly oscillatory in nature. The transmission oscillations are seen to consist of a train of sharp transmission dips of width approximately 100 ns and period close to 1 micros. A model of the system is developed incorporating thermal and free-carrier dynamics, and is compared to the observed behavior. Good agreement is found, and the self-induced optical modulation is attributed to a nonlinear interaction between competing free-carrier and phonon populations within the microdisk.
We present a theoretical model that describes accurately the nonlinear phenomenon of optical bistability in silicon-waveguide resonators but remains amenable to analytical results. Using this model, we derive a transcendental equation governing the intensity of a continuous wave transmitted through a Fabry-Perot resonator formed using a silicon-on-insulator waveguide. This equation reveals a dual role of free carriers in the formation of optical bistability in silicon. First, it shows that free-carrier absorption results in a saturation of the transmitted intensity. Second, the free-carrier dispersion and the thermo-optic effect may introduce phase shifts far exceeding those resulting from the Kerr effect alone, thus enabling one to achieve optical bistability in ultrashort resonators that are only a few micrometers long. Bistability can occur even when waveguide facets are not coated because natural reflectivity of the silicon- r interface can provide sufficient feedback. We find that it is possible to control the input-output characteristics of silicon-based resonators by changing the free-carrier lifetime using a reverse-biased p-n junction. We show theoretically that such a technique is suitable for realization of electronically assisted optical switching at a fixed input power and it may lead to silicon-based, nanometer-size, optical memories.
We demonstrate optical bistability in a Silicon-On-Insulator two-bus ring resonator with input powers as low as 0.3mW. We evaluate the importance of the different nonlinear contributions and derive time constants for carrier and thermal relaxation effects. In some cases, we also observe pulsation due to interaction between the dominant nonlinear effects. Such a behaviour may be problematic for possible memory and switching operations. Alternatively, it could be used for (tunable) pulse generation.