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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Optical bistability analysis inside a two-bus ring resonator

Gino Priem, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Geert I. Morthier, Roel Baets

Published Jan 1, 2005• 0 citations
Publisher

Abstract

We demonstrate experimentally optical bistability inside a two-bus ring resonator fabricated in silicon-on-insulator with a power of only 680 /spl mu/W. We have analysed the different contributions leading to this bistable behaviour and show that the dominant nonlinear effects are free carrier based.
DOI
10.1109/leos.2005.1547921

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We demonstrate optical bistability in a Silicon-On-Insulator two-bus ring resonator with input powers as low as 0.3mW. We evaluate the importance of the different nonlinear contributions and derive time constants for carrier and thermal relaxation effects. In some cases, we also observe pulsation due to interaction between the dominant nonlinear effects. Such a behaviour may be problematic for possible memory and switching operations. Alternatively, it could be used for (tunable) pulse generation.
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