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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Electric field effect on the persistent hole burning of quinone derivatives

Tetsuya Nishimura, Eiji Yagyu, Motomu Yoshimura, Noriaki Tsukada, Tetsu Takeyama

Published Mar 1, 1991• 2 citations
Publisher

Abstract

The capacity of optical memories can be enhanced by using extra dimensions to store the signals besides the spatial dimension. We have investigated the photochemical persistent hole burning (PHB) reaction in a series of quinone derivatives as the guest molecules. In wavelength dimension, we showed that 600 ultra-high multiple spectral holes can be recorded in a double layered system. To increase the multiplicity of spectral holes, we intended to use electric field as another dimension. We have investigated the influence of electric field effect (Stark effect) in the PHB reaction characteristics. We observed for the first time with the quinone derivative systems that the burnt holes were broadened and then diminished when the applied electric field was changed, and that they reappeared when the applied electric field was changed again to the initial value. Multiple hole formation in the electric field dimension and optical modulation by electric field were also achieved.

DOI
10.1117/12.45111

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The dependence of spectral holes of dye molecules in amorphous solids on the following parameters has been calculated: the electric field strength, the angles between the hole-burning and probing laser light fields and the external electric field, the electric dipole moment difference Δμm between the excited and ground state of the guest molecule, the contribution Δμ* of the host matrix to the electric dipole moment difference, and the angle γ, between Δμm and the transition dipole moment μge. When the molecular dipole moment difference Δμm dominates the spectral hole broadens or splits into two holes by the application of the electric field, depending on the angle γ and the directions of the laser light fields and the external field. With increasing values of the host-induced electric dipole moment difference Δμ* the spectral hole shape in the electric field changes significantly if appropriate directions of the light fields and the external field are chosen. The material parameters γ, Δμm, and Δμ* can be determined unequivocally by comparing the calculated holes both in the frequency dimension and the electric field dimension with experimental results.

The Journal of Chemical Physics•Jul 15, 1987•27 citations
The capacity of optical memories can be enhanced by using extra dimensions to store the signals besides the spatial dimension. We have investigated the photochemical persistent hole burning (PHB) reaction in a series of quinone derivatives as the guest molecules. In wavelength dimension, we showed that 600 ultra-high multiple spectral holes can be recorded in a double layered system. To increase the multiplicity of spectral holes, we intended to use electric field as another dimension. We have investigated the influence of electric field effect (Stark effect) in the PHB reaction characteristics. We observed for the first time with the quinone derivative systems that the burnt holes were broadened and then diminished when the applied electric field was changed, and that they reappeared when the applied electric field was changed again to the initial value. Multiple hole formation in the electric field dimension and optical modulation by electric field were also achieved.
(1) Photochemical Hole Burning (PHB) has a possibility to offer us an optical memory with ultra-high data storage density of more than 1011 bits/cm2 theoretically1). Such high data density can be achieved by multiplexing the information additional wavelength dimension besides the x-y spatial domain. The multiplexing of the information is realized by burning a sequence of narrow spectral holes as signals in the spectrum of a PHB material. Then the degree of information multiplexing depends on the degree of the multiple holes in the spectrum. The most essential subject for PHB memory is how densely and how many multiple holes can be formed without any interaction between any two holes.
Persistent spectral hole-burning (PHB) is a phenomenon that allows an additional dimension, the frequency at which spectral holes are written, to be used to encode digital data. PHB can be used to store a large number of bits of information in the volume irradiated by a focused laser beam, leading to a possible future storage technology, frequency domain optical storage. A large number of photochemical and photophysical mechanisms have led to the production of spectral holes; a wealth of information has been learned about host-guest interactions, dephasing, and solid-state photochemistry at low temperatures. The general structure of a frequency domain optical store places a set of constraints on the engineering of such a system as well as on the materials used as recording media. The dynamics of the hole-burning process are crucial; for monophotonic mechanisms in particular, a set of stringent constraints can be derived that limit the applicability of this class of materials. Recent discoveries of two-color, photon-gated hole-burning offer special promise for nondestructive reading and improved performance.
Photochemical hole burning (PHB) is a topic of attracting increasing interest from spectroscopic viewpoints as well as from the practical prospects for ultra-high-density frequency-domain optical storage. Recent advances in PHB study are reviewed mainly focusing on the effects of chemical structure of guest ions and molecules as well as host matrices on the efficiency of hole formation and its temperature dependence, low energy excitation modes and Debye-Waller factors in amorphous matrices, and the mechanism of photon-gated PHB.
Many investigations have been done on the field of frequency domain optical memories based on photochemical hole burning (PHB). This effect offers an extra dimension for the organization of an optical memory. At cryogenic temperatures several solid state materials such as aggregate color centers in alkali halide crystals exhibit inhomogeneously broadened absorption lines. In such an absorption line permanent narrow holes can be burnt by photochemical processes induced by exposure to intense laser radiation with a wavelength within the inhomogeneously broadened line.
The dependence of spectral holes of dye molecules in amorphous solids on the following parameters has been calculated: the electric field strength, the angles between the hole-burning and probing laser light fields and the external electric field, the electric dipole moment difference Δμm between the excited and ground state of the guest molecule, the contribution Δμ* of the host matrix to the electric dipole moment difference, and the angle γ, between Δμm and the transition dipole moment μge. When the molecular dipole moment difference Δμm dominates the spectral hole broadens or splits into two holes by the application of the electric field, depending on the angle γ and the directions of the laser light fields and the external field. With increasing values of the host-induced electric dipole moment difference Δμ* the spectral hole shape in the electric field changes significantly if appropriate directions of the light fields and the external field are chosen. The material parameters γ, Δμm, and Δμ* can be determined unequivocally by comparing the calculated holes both in the frequency dimension and the electric field dimension with experimental results.