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Modern Physics Letters B

Infrared control of slow light in a slab doped by InGaN / GaN quantum dot nanostructure

Hossein Jafarzadeh, Elnaz Ahmadi Sangachin, Seyyed Hossein Asadpour

Published Feb 20, 2015• 1 citation
Publisher

Abstract

In this paper, we proposed a model for controlling the group velocity of the transmitted and reflected pulses in a slab medium doped by four-level quantum dot nanostructure. Here, an infrared signal field interacted by quantum dot nanostructure can affect the behavior of reflected and transmitted pulses. We show that in the presence and absence of infrared pulses, the other controllable parameters have essential roles for controlling the slow and fast light propagation through the medium. Moreover, we found that the simultaneous slow and fast light can be obtained for the transmitted and reflected pulses by infrared signal field. Our proposed model may be useful for ultrahigh density optical memories in quantum communication systems or in various fields of all-optical systems.

DOI
10.1142/s0217984915500128

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In this paper, we proposed a model for controlling the group velocity of the transmitted and reflected pulses in a slab medium doped by four-level quantum dot nanostructure. Here, an infrared signal field interacted by quantum dot nanostructure can affect the behavior of reflected and transmitted pulses. We show that in the presence and absence of infrared pulses, the other controllable parameters have essential roles for controlling the slow and fast light propagation through the medium. Moreover, we found that the simultaneous slow and fast light can be obtained for the transmitted and reflected pulses by infrared signal field. Our proposed model may be useful for ultrahigh density optical memories in quantum communication systems or in various fields of all-optical systems.
Tunable phase control of the slow and fast light propagation through a defect slab medium doped by four-level InGaN/GaN quantum dot structure is demonstrated. By solving the Schrödinger and Poisson’s equations self-consistently, a spherical InGaN quantum dot with GaN barrier shell which can interact by terahertz (THz) signal field is designed numerically. It is found that the phase variation of THz signal field imparts the tunability in the group velocity of the transmitted and reflected pulses through a dielectric slab.
In this paper, we propose a novel scheme for controlling the group velocity of transmitted and reflected pulse from defect medium doped with four-level InGaN/GaN quantum dot nanostructure. Quantum dot nanostructure is designed numerically by Schrödinger and Poisson equations which solve self consistently. By size control of quantum dot and external voltage, one can design a four-level quantum dot with appropriate energy levels which can be suitable for controlling the group velocity of pulse transmission and reflection from defect slab with terahertz signal field. It is found that in the presence and absence of terahertz signal field the behaviors of transmission and reflection pulses are completely different. Moreover, it is shown that for strong terahertz signal field, by changing the thickness of the slab, simultaneous peak and dip for transmission and reflection pulse are obtained.
The transmission and reflection properties of a pulse through a slab doped with quantum dots near a plasmonic nanostructure are investigated theoretically. It is found that by adjusting the distance between plasmonic nanostructure and dual quantum dots which is varied from 8.8 nanometer (nm) to 14.4 nanometer (nm) the transmission and reflection spectra for incident pulse through the slab can be modified. Furthermore, it is found that in the presence of plasmonic nanostructure, the reflected and transmitted pulses are completely phase dependent. Therefore, the group velocity of the reflected and transmitted pulses can be switched from slow to fast light by changing the phase difference of two laser fields.
Abstract The propagation of an electromagnetic pulse through a dielectric slab doped with a triple quantum dot (QD) nanostructure has been discussed in the presence of electron tunneling. We include the effect of an incoherent pump field in the transmission and reflection of a pulse in a triple QD. It is shown that the reflected and transmitted pulses can be switched from subluminal to superluminal light propagation by changing either the rate of the incoherent pump field or the inter-dot tunneling between QD1, QD2 and QD3 in a slab. Furthermore, it is demonstrated that the inter-dot tunnel coupling can significantly affect the behavior of optical bistability (OB) and optical multi-stability (OM) in a dielectric slab. The obtained results can be used for the development of new types of nanoelectronic devices for realizing the switching process.
We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.