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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

An analytical investigation of excitonic absorption in terahertz-driven quantum wells

Tongyi Zhang, Wei Zhao

Published Nov 3, 2010• 0 citations
Publisher

Abstract

An analytical solution of the optical susceptibility of quantum wells driven by a terahertz (THz) field is achieved based on the density-matrix formalism. A simplified three-level model is adopted for the quantum well structures, with the levels coupled by a near-infrared (NIR) and a THz field. The equation of motion for the polarization is derived from Liouville's equation for the density matrix. Using Floquet's theorem, and under the rotating-wave approximation with respect to the NIR probe field, analytical expression for the optical susceptibility of the driven quantum wells is obtained. Different features rising induced by the driving THz field in the absorption spectrum of the NIR probe are discussed for the THz field near resonance and out of resonance of the intraexcitonic transition. This analytical investigation of the susceptibility of the THz-field-driven quantum wells is much useful for clearly identifying the physical principles obscured in the full numerical calculations.

DOI
10.1117/12.868775

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An analytical solution of the optical susceptibility of quantum wells driven by a terahertz (THz) field is achieved based on the density-matrix formalism. A simplified three-level model is adopted for the quantum well structures, with the levels coupled by a near-infrared (NIR) and a THz field. The equation of motion for the polarization is derived from Liouville's equation for the density matrix. Using Floquet's theorem, and under the rotating-wave approximation with respect to the NIR probe field, analytical expression for the optical susceptibility of the driven quantum wells is obtained. Different features rising induced by the driving THz field in the absorption spectrum of the NIR probe are discussed for the THz field near resonance and out of resonance of the intraexcitonic transition. This analytical investigation of the susceptibility of the THz-field-driven quantum wells is much useful for clearly identifying the physical principles obscured in the full numerical calculations.
Semiconductor quantum well electroabsorption modulators are widely used to modulate near-infrared (NIR) radiation at frequencies below 0.1 terahertz (THz). Here, the NIR absorption of undoped quantum wells was modulated by strong electric fields with frequencies between 1.5 and 3.9 THz. The THz field coupled two excited states (excitons) of the quantum wells, as manifested by a new THz frequency- and power-dependent NIR absorption line. Nonperturbative theory and experiment indicate that the THz field generated a coherent quantum superposition of an absorbing and a nonabsorbing exciton. This quantum coherence may yield new applications for quantum well modulators in optical communications.
An approach for solving the excitonic absorption in a semiconductor quantum well driven by an intense terahertz field is presented. The formalism relies on the stationary single-photon Schrodinger equation in the full quantum mechanical framework. The optical absorption dynamics in both weak and strong couplings are discussed and compared. The excitonic absorption spectra show the Autler—Townes doublets for the resonance terahertz field, a replica peak for the non-resonance terahertz field, and the electromagnetically induced transparency phenomenon for modulating the decay rate of the second electron state in the weak coupling. In particular, the electromagnetically induced transparency phenomenon window range is discussed. In the strong coupling region, the multi-order energy level resonance splitting due to the strong optical field is found. There are three (non-resonance terahertz field) or four (resonance terahertz field) peaks in the optical absorption spectra. This work provides a simple and convenient approach to deal with the optical absorption in the exciton system.
I recent years, significant attention has been given to nonlinear optical phenomena, such as nonlinear optical absorption and dispersion, derived from a driven quantum transition of semiconductor nanostructures, such as semiconductor quantum wells, quantum disks and mainly quantum dots. An important issue that is widely studied is the effect of probe electromagnetic field intensity on the total (nonlinear) absorption coefficient and on the total (nonlinear) index of refraction. Some of the phenomena that are commonly found for large electromagnetic field intensities are the creation of a strong dip in the absorption spectrum near or at resonance (the so-called bleaching effect), negative absorption near or at resonance that leads to optical gain and the change of the slope of the total index of refraction near or at resonance from negative to positive that changes the behavior of the system from fast to slow light. Unfortunately, these phenomena do not exist and are artifacts of a common abuse of the theoretical methodology for the study of the total absorption coefficient and the total index of refraction. The main error is that the total absorption coefficient and the total index of refraction was initially derived from density matrix equations using perturbation theory and includes first-order (linear) as well as third-order (nonlinear) terms. This method gives correct results for small electromagnetic field intensities and it leads to saturation of absorption and dispersion in this regime. However, for larger intensities it gives the misleading results mentioned above due to either failure of the order of perturbation theory considered in the derivation of the total absorption coefficient and the total index of refraction or even failure of perturbation theory at all in the treatment of the problem. In this work, we revisit the problem of the total absorption coefficient and the total index of refraction in a symmetric semiconductor quantum dot structure (we choose the example of a core-shell quantum dot) under a strong probe field excitation. We use the two-level model, solve the relevant density matrix equations under the rotating wave approximation and under steady state conditions, and obtain the correct form of the nonlinear optical susceptibility that is then used for the derivation of the formulae of the total absorption coefficient and the total index of refraction under the interaction with a strong probe field. Actually, the commonly used perturbation theory formulae can be obtained by our formulae using a series expansion and keeping terms up to second order in electric field amplitude. We also derive the electronic structure of the quantum dot system by solving numerically the time-independent Schrodinger equation, under the effective mass approximation, using the potential morphing method and obtain the energy difference and the electric dipole matrix element for the relevant transitions of the quantum dot system. Then, for the specific quantum dot system we compare the results of the total absorption coefficient and the total index of refraction for the two methodologies (the perturbation result and our result) for different electromagnetic field intensities.
Nonlinear optical properties of intersubband electrons in a 3-level quantum well under intense terahertz field are investigated by using a density matrix approach. The results show that the terahertz fields with different frequencies cause the distinct modulations of the intersubband absorptions. The terahertz-induced sideband and Autler–Towns splitting in the absorption spectrum are obtained, respectively for the terahertz-photon energy below and close to the transition energy between the ground and first excited state.
The nonlinear optical response of quantum well excitons is investigated experimentally using polarization resolved four wave mixing, optical-pump optical-probe, and optical-pump Terahertz-probe spectroscopy. The four-wave mixing data reveal clear signatures of coherent biexcitons which concur with straight-forward polarization selection rules at the Γ point. The type-I samples show the well-established time-domain beating signatures in the transients as well as the corresponding spectral signatures clearly. The latter are also present in type-II samples; however, the smaller exciton and biexciton binding energies in these structures infer longer beating times which, in turn, are accompanied by faster dephasing of the type-II exciton coherences. Furthermore, the THz absorption following spectrally narrow, picosecond excitation at energies in the vicinity of the 1s exciton resonance are discussed. Here, the optical signatures yield the well-established redshifts and blueshifts for the appropriate polarization geometries in type-I quantum well samples also termed “AC Stark Effect”. The THz probe reveals intriguing spectral features which can be ascribed to coherent negative absorption following an excitation into a virtual state for an excitation below the 1s exciton resonance. Furthermore, the scattering and ionization of excitons is discussed for several excitation geometries yielding control rules for elastic and inelastic quasiparticle collisions.