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physica status solidi (b)

Towards a mid‐infrared polaron laser using InAs/GaAs self‐assembled quantum dots

S. Sauvage, P. Boucaud, F. Bras, G. Fishman, J.M. Ortéga, Jean‐Michel Gérard, Gilles Patriarche, Aristide Lemaître

Published Oct 23, 2006• 0 citations
Publisher

Abstract

Abstract A three level scheme based on S–P polaron intersublevel transitions in n‐doped InAs/GaAs self‐assembled quantum dots is proposed to obtain laser effect around 25 µm wavelength under optical pumping. Temperature dependence of the optical gain is theoretically analysed. Lasing effect is expected up to 300 K. To probe the T 2 decoherence time, one of the key parameter driving the laser performances, an optical Rabi oscillation experiment is performed on the pumping transition. Transmission variation is measured as a function of the pump pulse area and modelled by 2‐level optical Bloch equations considering inhomogeneous contributions. We show that the non‐monotonous population dependence and damping of the oscillation is only compatible with a T 2 ∼ 5 ps dephasing time, one order of magnitude longer than in quantum wells and one order of magnitude shorter than the 45 ps relaxation time of the S–P transition, demonstrating a non relaxation‐limited decoherence for the transition. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

DOI
10.1002/pssb.200671517

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Abstract A three level scheme based on S–P polaron intersublevel transitions in n‐doped InAs/GaAs self‐assembled quantum dots is proposed to obtain laser effect around 25 µm wavelength under optical pumping. Temperature dependence of the optical gain is theoretically analysed. Lasing effect is expected up to 300 K. To probe the T 2 decoherence time, one of the key parameter driving the laser performances, an optical Rabi oscillation experiment is performed on the pumping transition. Transmission variation is measured as a function of the pump pulse area and modelled by 2‐level optical Bloch equations considering inhomogeneous contributions. We show that the non‐monotonous population dependence and damping of the oscillation is only compatible with a T 2 ∼ 5 ps dephasing time, one order of magnitude longer than in quantum wells and one order of magnitude shorter than the 45 ps relaxation time of the S–P transition, demonstrating a non relaxation‐limited decoherence for the transition. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
A three‐level scheme based on S‐P polaron intersublevel transitions in n‐doped InAs/GaAs self‐assembled quantum dots is proposed to obtain laser effect around 25 μm wavelength under optical pumping. The theoretical proposition is supported by the experimental knowledge of key input parameters: T1, T2, oscillator strenghs and polarizations. The intensity thresholds are predicted to be two orders of magnitude lower than for corresponding intersubband lasers and laser effect is expected to occur up to room temperature. The T2 dephasing time of the S‐P+ transition is measured by performing an optical Rabi oscillation experiment in resonance with the S‐P+ transition. We show that the non‐monotonous population dependence with pulse area and damping of the oscillation is only compatible with a T2∼5 ps dephasing time, one order of magnitude longer than in quantum wells and one order of magnitude shorter than the 45 ps relaxation time of the s‐p transition, demonstrating a non relaxation‐limited decoherence for the transition.
We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.
Abstract In this work femtosecond spectral hole burning spectroscopy is used to resonantly excite ground state excitons in an ensemble of self‐assembled InAs/GaAs quantum dots with a strong pump pulse. Two fundamental coherent nonlinear effects are observed with the aid of the intrinsic time‐ and frequency resolution of the setup: The low temperature Rabi oscillation of the two‐level system associated with the excitonic ground state transition and the observation of two‐photon absorption in the surrounding GaAs crystal matrix. The emergence of the latter effect also infers the existence of charged excitons in the nominally undoped QD sample, backed up by the observation of additional spectral holes next to the excitonic transitions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
We present a model which treats non-perturbatively the effects of both the dipolar coupling and reservoir fluctuations on the interband optical response of a 3-level single quantum dot. We are able to study the transition to a Rabi-like situation with increasing excitation power. Our three level system allows us to simulate both PL and photoluminescence excitation (PLE) experiments.The PL spectrum displays one or a few lines depending on the excitation intensity, relaxation efficiency and reservoir fluctuation rates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
We report on four-wave-mixing experiments in self-assembled InAs/GaAs quantum dots and compare with a theory that accounts for the pure-dephasing induced by acoustic phonons. The measurements demonstrate an unusual non-monotonous temperature dependence of the initial decoherence time in full agreement with previous theoretical predictions made on the basis of a model that concentrates on the lowest electronic states. For samples exhibiting strong electronic confinement this model even yields a good quantitative agreement with the experiments while for less confined samples there are some systematic deviations although many qualitative features are still well reproduced by the model. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)