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Physics Letters A

Exciton-phonon interaction and temperature-dependent optical bistabilities of semiconductor CdS

Guo-Xin Xie, Lun‐Biao Xu, Qing-Jian Yang, Shoufu Cai

Published Apr 1, 1990• 0 citations
Publisher
DOI
10.1016/0375-9601(90)90673-c

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Optical Engineering•Apr 1, 1995•11 citations
A general discussion of the linear-optical properties of free and bound excitons in direct-gap semiconductors at low temperature is presented. This discussion then specializes to CdS. The nonlinear-optical response of CdS is introduced by first discussing the saturation behavior of bound excitons. A new type of cavityless optical bistability based on induced absorption near the free and bound excitons is described. Finally, fast all-optical switching (<1 nsec) at very low switching energies (<8 pJ) is demonstrated, using the giant nonlinearity associated with bound excitons.
Abstract A joint effect of exciton–phonon and exciton–exciton interactions on optical properties of semiconductors is studied. In these substances the exciton density is shown to be a multivalued function of incident light intensity and the frequency and temperature conditions under which the optical bistability arises are specified. Investigation of nonlinear optical properties of semiconductors with account for the indirect phototransitions exhibits that both multistable optical states and the bistable ones distinguished by a complicated dynamics of the switching may be observed in such systems.
An exciton-phonon mechanism for producing cavityless optical bistability is suggested. We consider the influence of the oscillating subsystem of a crystal on the absorption process of a laser wave in the region of exciton frequencies. It is shown that exciton-phonon interaction leads to nonlinear dependence of the absorption coefficient on the density of the exciton gas. The increase of absorption with increasing exciton density, however, is possible only in the frequency region on the long-wavelength tail of the exiton band. As a result, the exciton density of the crystal becomes a hysteresis function of external parameters (intensity of the incident wave, temperature, etc.). We calculate the absorption coefficient of excitons and define the frequency and temperature regions where optical bistability may exist. We analyze different relaxation mechanisms of excitons and explain the experimental results of observing optical bistability in different semiconductor crystals.