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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Magnetic effects on THz superconducting tunnel junctions at different temperatures

Cheng-Jiang Zhang, Qijun Yao, Sheng‐Cai Shi

Published Jun 9, 2011• 0 citations
Publisher

Abstract

We have investigated the effect of a moderately strong magnetic field (generated by superconducting coil, up to 380Gauss, 6 quantum fluxes within a single junction; generated by one piece of permanent magnet; generated by two pieces of permanent magnets respectively) on Nb superconducting tunnel junctions at different temperatures. Both experimental and numerical results show that the superconducting tunnel junction DC Josephson current can be significantly reduced by a magnetic field. A relatively strong magnet field may suppress the gap voltage as well as the sharp nonlinearity at the gap. We also investigated the leakage current and DC Josephson current of the Nb SIS junction at different temperatures.

DOI
10.1117/12.900323

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2007•1 citation
We have investigated the effect of a moderately strong magnetic field (generated by superconducting coil, up to 380Gauss, 6 quantum fluxes within a single junction; generated by one piece of permanent magnet; generated by two pieces of permanent magnets respectively) on Nb superconducting tunnel junctions at different temperatures. Both experimental and numerical results show that the superconducting tunnel junction DC Josephson current can be significantly reduced by a magnetic field. A relatively strong magnet field may suppress the gap voltage as well as the sharp nonlinearity at the gap. We also investigated the leakage current and DC Josephson current of the Nb SIS junction at different temperatures.
Superconductor–insulator–superconductor (SIS) tunnel junctions including magnetic barriers, with structures NbN/AlNiN/NbN or NbN/MgO/NiO/MgO/NbN, were fabricated. The junctions with upper NbN layers of good crystallinity showed a gap voltage ( V g ) higher than 5 mV. In an NbN/Al 0.942 Ni 0.058 N/NbN junction, its Josephson current I c was suppressed to approximately a third of a theoretical value under no magnetic field. Therefore, it would be possible to avoid Josephson noise in magnetic barrier junctions with a much smaller magnetic field than junctions with conventional barriers. The Ni ion area density dependence of I c suppression ratio was identical for both types of junction, suggesting that the area density of magnetic ions is the factor that determines the I c suppression ratio. On the other hand, the extents of degradation of V g and increase in leakage current caused by the increase in Ni ion area density were smaller in MgO/NiO/MgO barrier junctions than in AlNiN barrier junctions. This suggests that the proximity effect of magnetic ions was weakened owing to the separation of Ni ions and NbN layers by the inserted thin MgO layers.
The magnetic field dependence of the Josephson current of a Josephson tunnel junction whose shape was a normal distribution is analyzed for superconducting tunnel junction (STJ) photon detector applications. It was found that the Josephson current of a normal distribution junction is very sensitive to the external magnetic field and follows a function of exp (-B 2), while a conventional rectangular STJ exhibits the well-known Fraunhofer pattern of sin x/x. Numerical calculations show that the Josephson current of the normal distribution junction can be suppressed by an external magnetic field that is one tenth of that needed for conventional rectangular junctions. Calculations of a normal distribution junction approximated with a 1 µm mesh also show that the Josephson current is sufficiently suppressed by a small magnetic field. The effect of the misalignment of the angle between the junction and the magnetic field was evaluated. It was found that for a normal-distribution-shaped junction, misalignment of the magnetic field is allowed within ± 5°, suppressing the Josephson effect by two orders of magnitude more than that of a rectangular junction.
We present a systematic study of the temperature-dependent transport properties of Nb- and Al-based superconductor--insulator--thin superconductor--ferromagnet--superconductor (SIsFS) Josephson junctions. By varying the superconducting material and the thickness of the intermediate superconducting layer, we identify three distinct transport regimes: a tunnel-dominated SIS-like regime, a temperature-driven crossover, and a complex weak-link regime. A unified Usadel-based description connects these regimes through the self-consistent pair potential of the intermediate s-layer. While for Al-based devices an SIS-like transport regime is observed, a self-consistent calculation of the s/F/S proximity electrode, combined with perturbative tunnel coupling to the outer electrode, accounts for Nb devices with different thickness of the superconducting interlayer. The calculation places the 10-nm-interlayer sample in a proximity-supported, strongly suppressed s state, close to the SInFS limit in which the interlayer is effectively driven normal (\textit{n}). A reduced nonlinear long-junction description captures the same limiting physics. The evolution of I_cR_N(T) thereby provides a direct experimental signature of the three transport regimes. Beyond the fundamental interest, the results establish practical design guidelines: Nb junctions with sufficiently thick s interlayers are well suited for high-speed cryogenic memory elements and tunable superconducting parametric amplifiers, while Al junctions are natural candidates for coherent superconducting quantum circuits
Superconducting tunnel junctions, which are also known as superconductor-insulator-superconductor (SIS) junctions, are widely used in coherent detection (heterodyne mixing) of electromagnetic radiation at millimeter and submillimeter wavelengths to achieve high spectral resolution (Delta v/v<10(-6)). With extremely low dark current and high quantum efficiency, superconducting tunnel junctions are also promising for THz photon detection. Besides the merit of high detection sensitivity, THz photon detectors with superconducting tunnel junctions can be operated at relatively high temperatures (above 0.3 K) and don't need rather complicated filtering systems by simply incorporating a superconducting resonant circuit with superconducting tunnel junctions. This paper mainly investigates the characteristics of THz photon detectors with Nb and NbN-based superconducting tunnel junctions. The MAR effect and associated shot noise are addressed. Some analytical and preliminary experimental results are presented.
In this paper, we present a method to measure the effective physical temperature of the tunnel junction in a terahertz superconductor-insulator-superconductor (SIS) mixer when illuminated with a strong local oscillator (LO) power that results in local hot spot around the tunnel junction. We observed that the gap voltage of the pumped current-voltage (IV) curve is suppressed when the LO pumping level is increased, indicating that the junction physical temperature is increased beyond the mixer block temperature. We quantified this extra heating effect by recovering the effective junction temperature through comparing the gap voltage of the pumped IV curves measured at a fixed block temperature, with the unpumped IV curve measured at varying block temperatures. We found that the heat trapped in the tunnel junction can be as high as 1.7 K when the mixer stabilised at 3.3 K is pumped at only 21% of the gap current.
Superconducting tunnel junctions, which are also known as superconductor-insulator-superconductor (SIS) junctions, are widely used in coherent detection (heterodyne mixing) of electromagnetic radiation at millimeter and submillimeter wavelengths to achieve high spectral resolution (Δν/ν<10-6). With extremely low dark current and high quantum efficiency, superconducting tunnel junctions are also promising for THz photon detection. Besides the merit of high detection sensitivity, THz photon detectors with superconducting tunnel junctions can be operated at relatively high temperatures (above 0.3 K) and don't need rather complicated filtering systems by simply incorporating a superconducting resonant circuit with superconducting tunnel junctions. This paper mainly investigates the characteristics of THz photon detectors with Nb and NbN-based superconducting tunnel junctions. The MAR effect and associated shot noise are addressed. Some analytical and preliminary experimental results are presented.