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Superconductor Science and Technology

Characterization of submillimetre quasi-optical twin-slot double-junction SIS mixers

Michael C. Gaidis, M. Bin, D Miller, Jonas Stasys Zmuidzinas, Henry George LeDuc, J. A. Stern

Published Apr 1, 1996• 0 citations
Publisher

Abstract

We report on the continuing development of submillimetre quasi-optical slot antenna SIS mixers, which use two-junction tuning circuits. Direct and heterodyne Fourier transform spectrometer measurements have been performed to compare device performance with predictions. Demonstrated double-sideband receiver noise temperatures of better than 540 K at 808 GHz make these SIS mixers substantially better than GaAs Schottky receivers for the astronomically important CI and CO transitions near 810 GHz.

DOI
10.1088/0953-2048/9/4a/034

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We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens

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We report on the development of low-noise quasi-optical SIS mixers for the frequency range 400-850 GHz. The mixers utilize twin-slot antennas, two-junction tuning circuits, and Nb-trilayer junctions. Fourier-transform spectrometry has been used to verify that the frequency response of the devices is well predicted by computer simulations. The 400-850 GHz frequency band can be covered with four separate fixed-tuned mixers. We measure uncorrected double-sideband receiver noise temperatures around 5h/spl nu//k/sub B/ to 700 GHz, and better than 540 K at 808 GHz. These results are among the best reported to date for broadband heterodyne receivers.

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We describe quasi-optical SIS mixers operating in the submillimeter band (500-750 GHz) which have very low noise, around 5 h/spl nu//k/sub B/ for the double-sideband receiver noise temperature. The mixers use a twin-slot antenna, Nb/Al-Oxide/Nb tunnel junctions fabricated with optical lithography, a two-junction tuning circuit, and a silicon hyperhemispherical lens with a novel antireflection coating to optimize the optical efficiency. We have flown a submillimeter receiver using these mixers on the Kuiper Airborne Observatory, and have detected a transition of H/sub 2//sup 18/O at 745 GHz. This directly confirms that SIS junctions are capable of low-noise mixing above the gap frequency.>

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Slot antenna SIS mixers for submillimeter wavelengths

Jonas Stasys Zmuidzinas, Henry George LeDuc, Jeff A. Stern

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

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Mei Bin, Michael C. Gaidis, Jonas Stasys Zmuidzinas +2 more

We recently reported (1996) a quasi-optical SIS mixer which used Nb/Al-oxide/Nb tunnel junctions and a normal-metal (Al) tuning circuit to achieve an uncorrected receiver noise temperature of 840 K (DSB) at 1042 GHz. Here we present results on several different device designs, which together cover the 300-1200 GHz frequency range. The mixers utilize an antireflection-coated silicon hyper-hemispherical lens, a twin-slot antenna, and a two-junction tuning circuit. The broad-band frequency response was measured using Fourier transform spectrometry (FTS), and is in good agreement with model calculations. Heterodyne tests were carried out from 400 GHz up to 1040 GHz, and these measurements agree well with the FTS results and with calculations based on Tucker's theory (1985).

IEEE Transactions on Applied Superconductivity•Jun 1, 1997•24 citations
We report on the continuing development of submillimetre quasi-optical slot antenna SIS mixers, which use two-junction tuning circuits. Direct and heterodyne Fourier transform spectrometer measurements have been performed to compare device performance with predictions. Demonstrated double-sideband receiver noise temperatures of better than 540 K at 808 GHz make these SIS mixers substantially better than GaAs Schottky receivers for the astronomically important CI and CO transitions near 810 GHz.
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens
We report on the development of low-noise quasi-optical SIS mixers for the frequency range 400-850 GHz. The mixers utilize twin-slot antennas, two-junction tuning circuits, and Nb-trilayer junctions. Fourier-transform spectrometry has been used to verify that the frequency response of the devices is well predicted by computer simulations. The 400-850 GHz frequency band can be covered with four separate fixed-tuned mixers. We measure uncorrected double-sideband receiver noise temperatures around 5h/spl nu//k/sub B/ to 700 GHz, and better than 540 K at 808 GHz. These results are among the best reported to date for broadband heterodyne receivers.
91101. Abstract—We report on the design and characterization of broadband quasi-optical SIS receirvers for the 1 THz frequency band. The mixer design utilizes a twin-slot antenna, an antirefiection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. The fre- quency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. Heterodyne tests were carried out from 822-1042 GHz and low receiver noise temperatures of about 770 K were obtained after correcting the losses from the LO/signal beamsplitter.
We describe quasi-optical SIS mixers operating in the submillimeter band (500-750 GHz) which have very low noise, around 5 h/spl nu//k/sub B/ for the double-sideband receiver noise temperature. The mixers use a twin-slot antenna, Nb/Al-Oxide/Nb tunnel junctions fabricated with optical lithography, a two-junction tuning circuit, and a silicon hyperhemispherical lens with a novel antireflection coating to optimize the optical efficiency. We have flown a submillimeter receiver using these mixers on the Kuiper Airborne Observatory, and have detected a transition of H/sub 2//sup 18/O at 745 GHz. This directly confirms that SIS junctions are capable of low-noise mixing above the gap frequency.>
We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.
We recently reported (1996) a quasi-optical SIS mixer which used Nb/Al-oxide/Nb tunnel junctions and a normal-metal (Al) tuning circuit to achieve an uncorrected receiver noise temperature of 840 K (DSB) at 1042 GHz. Here we present results on several different device designs, which together cover the 300-1200 GHz frequency range. The mixers utilize an antireflection-coated silicon hyper-hemispherical lens, a twin-slot antenna, and a two-junction tuning circuit. The broad-band frequency response was measured using Fourier transform spectrometry (FTS), and is in good agreement with model calculations. Heterodyne tests were carried out from 400 GHz up to 1040 GHz, and these measurements agree well with the FTS results and with calculations based on Tucker's theory (1985).