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Optics Letters

Thermo-optical bistability with Si nanocrystals in a whispering gallery mode resonator

Fernando Ramiro‐Manzano, N. Prtljaga, Lorenzo Pavesi, Georg Pucker, Mher Ghulinyan

Published Sep 4, 2013• 22 citations

Abstract

We report on the observation of optical bistability in an integrated planar microresonator with embedded silicon nanocrystals (Si-ncs). The phenomenon originates from the thermo-optical modulation of the silica-embedded Si-ncs refractive index, which in turn alters the spectral position of the resonator mode. The estimated thermo-optical coefficient of the Si nanocrystalline material, dn/dT≈2.92×10(-5)> K(-1), is an order of magnitude lower than that of bulk silicon. Both time-resolved pump-and-probe experiments and numerical simulations confirm that the silica host is responsible for the heat dissipation from the resonator. Moreover, a negligible Q-factor degradation at pump powers as high as 100 mW, along with the absence of a fast component in time-resolved measurements, confirm the minute contribution from excited carriers effects. These observations, combined with the already published large third-order nonlinearities of Si-ncs (an order of magnitude larger than in bulk Si), make this system an outstanding candidate for low-power on-chip nonlinear comb generation.

DOI: 10.1364/ol.38.003562

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We report on the observation of optical bistability in an integrated planar microresonator with embedded silicon nanocrystals (Si-ncs). The phenomenon originates from the thermo-optical modulation of the silica-embedded Si-ncs refractive index, which in turn alters the spectral position of the resonator mode. The estimated thermo-optical coefficient of the Si nanocrystalline material, dn/dT≈2.92×10(-5)> K(-1), is an order of magnitude lower than that of bulk silicon. Both time-resolved pump-and-probe experiments and numerical simulations confirm that the silica host is responsible for the heat dissipation from the resonator. Moreover, a negligible Q-factor degradation at pump powers as high as 100 mW, along with the absence of a fast component in time-resolved measurements, confirm the minute contribution from excited carriers effects. These observations, combined with the already published large third-order nonlinearities of Si-ncs (an order of magnitude larger than in bulk Si), make this system an outstanding candidate for low-power on-chip nonlinear comb generation.

We demonstrate, for the first time to our knowledge, optical bistability on a highly integrated silicon device, using a 5-microm-radius ring resonator. The strong light-confinement nature of the resonator induces nonlinear optical response with low pump power. We show that the optical bistability allows all-optical functionalities, such as switching and memory with microsecond time response and a modulation depth of 10 dB, driven by pump power as low as 45 microW. Silicon optical bistability relies on a fast thermal nonlinear optical effect presenting a 500-kHz modulation bandwidth.

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Optical bistability (BI) and self-pulsation (SP) in high-

Q

silicon microring resonators (MRRs) induced by thermo-optical (TO) effect and other nonlinear effects are theoretically studied with coupled mode theory and linear stability analysis method. It is found that the boundaries for both BI and SP are mainly restricted by two counteracting effects: free carrier dispersion effect and TO effect. If the refractive index changes of a MRR caused by these two effects are on the same order of magnitude, the output power will exhibit much more complicated dependence on the input power and wavelength, namely, input-power-dependent multi-BI and multi-SP regions will exist at certain input wavelength range. The controllability of multi-BI and multi-SP phenomena by the input power and input wavelength could be very useful in all-optical nonlinear devices.

We demonstrate low-power thermo-optic-based optical bistability in a free-standing silicon ring resonator. A bistable optical response is achieved at reduced pump powers by thermally isolating the ring resonator from its supporting substrate with an air gap. The conversion efficiency from optical power to temperature change in the silicon core is enhanced. The optical transfer function of the resulting free-standing resonator exhibits a hysteresis loop for 80 microW input optical power. Similar nonthermally isolated resonators at the same detuning do not exhibit a bistable mode for input powers less than 2 mW.

We quantitatively analyze the performance of optical memories based on Kerr bistability in microcavites. We model a silicon nitride microring and a silica toroid microcavity, and examine the performances of these cavities in an actual situation where there is a thermo-optic effect. Numerical simulations based on coupled mode theory and the thermal diffusion equation reveal that an input power of 1.8 W is necessary to achieve a Kerr bistable memory in a silicon nitride microring, while that of only 1.7 mW is necessary in a silica toroid microcavity. This result shows that the use of silica toroid microcavity is advantageous when we want to demonstrate a Kerr bistable memory operation with a reasonably low input power. In addition, we quantitatively investigate the trade-off between the required input power and the response speed of the device.