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Journal of Luminescence

Large refractive index without absorption via quantum interference in a semiconductor quantum well

Zhiping Wang, Benli Yu, Shenglai Zhen, Xuqiang Wu

Published Aug 28, 2012• 36 citations
Publisher
DOI
10.1016/j.jlumin.2012.08.033

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The electromagnetically induced left-handedness with zero absorption and large negative refractive index was investigated in a solid Er3+:YAG crystal with a four-level system proposed for an atomic medium. It was found that the frequency region with simultaneous negative permittivity and negative permeability, the zero absorption intervals, and the maximum values of the negative refractive index can be adjusted by changing the signal field, the coherent field, as well as the concentration of Er3+ ion in crystal. It is shown that wider zero absorption intervals with a higher index of refraction can be easily obtained when the signal field is only off resonance. The slab fabricated by the left-handed solid medium Er3+:YAG crystal with zero absorption may be a practical candidate for designing perfect lenses.
A four-level system is proposed to produce large index of refraction accompanied by vanishing absorption in the Er3+{\mathrm{Er}}^{3+}Er3+-doped yttrium aluminum garnet crystal. It is found that the separation of the two absorption peaks and the maximum value of index of refraction with zero absorption can be adjusted by changing the coherent field and the incoherent pumping. It is shown that a higher index of refraction with zero absorption can be easily obtained when the coherent field is off resonance.