Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Modified spontaneous emission in erbium-doped SiO2 spherical colloids

M. J. A. de Dood, Lenneke H. Slooff, Albert Polman, Alexander Moroz, Alfons van Blaaderen

Published Nov 26, 2001• 31 citations
Publisher

Abstract

Spherical SiO2 colloids with two different diameters (175 nm, 340 nm) were doped with erbium at different concentrations. The spheres show sharply peaked photoluminescence centered at 1.535 μm, due to intra-4f transitions in Er3+. From measurements of the Er decay rate for different Er concentrations the decay rate of isolated Er ions (i.e., in absence of concentration quenching) was determined for the two colloid diameters. The data were compared to spontaneous emission rates derived from calculations of the local optical density of states in the colloids. The calculation predicts a large difference in the spontaneous emission rate for both colloid sizes (61 vs 40 s−1), in perfect agreement with the measured data.

DOI
10.1063/1.1419033

Related papers

Controlled spontaneous emission in erbium-doped microphotonic materials

Jeroen Kalkman

Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.

•Mar 9, 2005•3 citations

Controlled Atomic-like Spontaneous Emission from Implanted Erbium in a Si/SiO2 Microcavity

Arjen M. Vredenberg, N. E. J. Hunt, E. Fred Schubert +3 more

Since the advent of vertical cavity surface-emitting lasers, a renewed interest has also emerged for the spontaneous emission from Fabry-Pérot microcavities. Changes in spontaneous emission characteristics in a 1D microcavity were predicted long ago,1 but have been demonstrated only recently in the optical domain for solid-state, e.g. semiconductor, structures where changes in spectral purity, lifetime, and emission intensity were observed.2 However, the interpretation of these effects is somewhat obscure, because these structures are highly absorbing and often involve band-to-band, rather than atomic, transitions. In the present study, we use optically transparent Si/SiO2 cavities, consisting of two coplanar Si/SiO2 distributed Bragg reflectors (DBR) around a (λ/2) SiO2 active region, which was doped with ~0.2 at.% Er3+ ions through MeV ion implantation. The Er3+ ions in SiO2 exhibit a sharp, atomic-like, intra-4f transition around λem=1.54 μm, which is effectively shielded by the outerlying filled 5s2 and 5p6 shells. Recently, we reported on the considerable enhancement of the spontaneous emission intensity out of such an Er-doped microcavity.3 In this paper, we present a more detailed study of the modified spontaneous emission, including fluorescence decay measurements to study the effect of the cavity on the spontaneous emission rate.

Quantum Optoelectronics•Jan 1, 1993•2 citations

Förster transfer and the local optical density of states in erbium-doped silica

M. J. A. de Dood, Jasper Knoester, A. Tip +1 more

Optically excited erbium ions incorporated near the surface of a silica glass decay by spontaneous emission and---at high Er concentration---via F\"orster energy transfer to quenching sites. By externally modifying the photonic microstructure we vary the local optical density of states (LDOS) in samples with different degrees of F\"orster transfer. Changes in spontaneous emission rate are consistent with calculated variations in LDOS at $1.5\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$, while F\"orster energy transfer is not affected by the LDOS. The latter is attributed to the fact that F\"orster transfer involves virtual photons with a broad energy spectrum, excluding a special role for the LDOS at the atom's transition frequency.

Physical Review B•Mar 4, 2005•109 citations

Measuring and Modifying the Spontaneous Emission Rate of Erbium near an Interface

E. Snoeks, Ad Lagendijk, Albert Polman

Erbium implanted sodalime silicate glass was covered with a range of transparent liquids. The spontaneous emission rate of ${\mathrm{Er}}^{3+}$ around 1.54 $\ensuremath{\mu}$m shows clear changes depending on the liquid refractive index and Er depth. A rigorous quantum mechanical calculation shows that the effect of the interface on the spontaneous emission rate is fully described by the classical density of optical modes as a function of distance from the interface. The data provide the first direct determination of the radiative transition rate $(45{s}^{\ensuremath{-}1})$ at 1.54 $\ensuremath{\mu}$m of ${\mathrm{Er}}^{3+}$ which is widely used in optical amplifiers.

Physical Review Letters•Mar 27, 1995•240 citations

Spontaneous Emission of Europium Ions Embedded in Dielectric Nanospheres

Hannes C. Schniepp, Vahid Sandoghdar

We measure fluorescence lifetimes of emitters embedded in isolated single dielectric nanospheres. By varying the diameters of the spheres from 100 nm to 2 microm and by modifying their dielectric surrounding, we demonstrate a systematic change of paradigm in the spontaneous emission rate, as we cross the border from the superwavelength regime of Mie resonances to the nanoscopic realm of Rayleigh scattering. Our data show inhibition of the spontaneous emission up to 3 times and are in excellent agreement with the results of analytical calculations.

Physical Review Letters•Dec 3, 2002•133 citations

Optical spectra and analysis of Er3+ in silicon with C, O, and N impurities

D. E. Wortman, Carole A. Morrison, John L. Bradshaw

Photoluminescence (PL) spectra of Er3+ in an Er-doped silicon film were recorded at 2 and 77 K over the wavelength range from 1.52 to 1.68 μm, which includes optical transitions between the Er3+ I13/24 and I15/24 manifolds. These spectra were then analyzed to determine the nature of the electrostatic field at the site of the Er ion that governs the ion’s optical behavior. The PL spectra were analyzed three different ways: by considering the Er3+ ions to be occupying sites of Td, C3, or D2d point group symmetry. Transition energies and magnetic dipole transition probabilities were calculated for each case by diagonalizing a Hamiltonian representing the free-ion and crystal-field interactions in a Russell–Saunders basis of states spanning the lowest 15 J multiplets of the 4f11 electronic configuration of Er3+. Crystal-field parameters were varied in each case to find the best agreement with the experiment. Our results showed that the site symmetry of the Er3+ ions most consistent with the data is D2d. For this case, the rms deviation between the experimental and calculated energy levels is 3.3 cm−1 with the calculated magnetic dipole transition probabilities in qualitative agreement with the experiment.

Journal of Applied Physics•Sep 1, 1997•8 citations
Spherical SiO2 colloids with two different diameters (175 nm, 340 nm) were doped with erbium at different concentrations. The spheres show sharply peaked photoluminescence centered at 1.535 μm, due to intra-4f transitions in Er3+. From measurements of the Er decay rate for different Er concentrations the decay rate of isolated Er ions (i.e., in absence of concentration quenching) was determined for the two colloid diameters. The data were compared to spontaneous emission rates derived from calculations of the local optical density of states in the colloids. The calculation predicts a large difference in the spontaneous emission rate for both colloid sizes (61 vs 40 s−1), in perfect agreement with the measured data.
Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.
Since the advent of vertical cavity surface-emitting lasers, a renewed interest has also emerged for the spontaneous emission from Fabry-Pérot microcavities. Changes in spontaneous emission characteristics in a 1D microcavity were predicted long ago,1 but have been demonstrated only recently in the optical domain for solid-state, e.g. semiconductor, structures where changes in spectral purity, lifetime, and emission intensity were observed.2 However, the interpretation of these effects is somewhat obscure, because these structures are highly absorbing and often involve band-to-band, rather than atomic, transitions. In the present study, we use optically transparent Si/SiO2 cavities, consisting of two coplanar Si/SiO2 distributed Bragg reflectors (DBR) around a (λ/2) SiO2 active region, which was doped with ~0.2 at.% Er3+ ions through MeV ion implantation. The Er3+ ions in SiO2 exhibit a sharp, atomic-like, intra-4f transition around λem=1.54 μm, which is effectively shielded by the outerlying filled 5s2 and 5p6 shells. Recently, we reported on the considerable enhancement of the spontaneous emission intensity out of such an Er-doped microcavity.3 In this paper, we present a more detailed study of the modified spontaneous emission, including fluorescence decay measurements to study the effect of the cavity on the spontaneous emission rate.
Optically excited erbium ions incorporated near the surface of a silica glass decay by spontaneous emission and---at high Er concentration---via F\"orster energy transfer to quenching sites. By externally modifying the photonic microstructure we vary the local optical density of states (LDOS) in samples with different degrees of F\"orster transfer. Changes in spontaneous emission rate are consistent with calculated variations in LDOS at $1.5\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$, while F\"orster energy transfer is not affected by the LDOS. The latter is attributed to the fact that F\"orster transfer involves virtual photons with a broad energy spectrum, excluding a special role for the LDOS at the atom's transition frequency.
Erbium implanted sodalime silicate glass was covered with a range of transparent liquids. The spontaneous emission rate of Er3+{\mathrm{Er}}^{3+}Er3+ around 1.54 $\ensuremath{\mu}$m shows clear changes depending on the liquid refractive index and Er depth. A rigorous quantum mechanical calculation shows that the effect of the interface on the spontaneous emission rate is fully described by the classical density of optical modes as a function of distance from the interface. The data provide the first direct determination of the radiative transition rate $(45{s}^{\ensuremath{-}1})$ at 1.54 $\ensuremath{\mu}$m of Er3+{\mathrm{Er}}^{3+}Er3+ which is widely used in optical amplifiers.
We measure fluorescence lifetimes of emitters embedded in isolated single dielectric nanospheres. By varying the diameters of the spheres from 100 nm to 2 microm and by modifying their dielectric surrounding, we demonstrate a systematic change of paradigm in the spontaneous emission rate, as we cross the border from the superwavelength regime of Mie resonances to the nanoscopic realm of Rayleigh scattering. Our data show inhibition of the spontaneous emission up to 3 times and are in excellent agreement with the results of analytical calculations.
Photoluminescence (PL) spectra of Er3+ in an Er-doped silicon film were recorded at 2 and 77 K over the wavelength range from 1.52 to 1.68 μm, which includes optical transitions between the Er3+ I13/24 and I15/24 manifolds. These spectra were then analyzed to determine the nature of the electrostatic field at the site of the Er ion that governs the ion’s optical behavior. The PL spectra were analyzed three different ways: by considering the Er3+ ions to be occupying sites of Td, C3, or D2d point group symmetry. Transition energies and magnetic dipole transition probabilities were calculated for each case by diagonalizing a Hamiltonian representing the free-ion and crystal-field interactions in a Russell–Saunders basis of states spanning the lowest 15 J multiplets of the 4f11 electronic configuration of Er3+. Crystal-field parameters were varied in each case to find the best agreement with the experiment. Our results showed that the site symmetry of the Er3+ ions most consistent with the data is D2d. For this case, the rms deviation between the experimental and calculated energy levels is 3.3 cm−1 with the calculated magnetic dipole transition probabilities in qualitative agreement with the experiment.