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physica status solidi (b)

Dispersion and Absorption Anomalies in Three‐Level Systems

B. Hönerlage, J.‐Y. Bigot

Published Jul 1, 1984• 25 citations
Publisher

Abstract

Abstract Using the density‐matrix formalism, the dielectric function of athree‐level system under high excitation conditions is determined. The density matrix being calculated by a continuous matrix inversion, non‐resonant contributions and saturation effects can be fully accounted for and the stability of absorption and dispersion anomalies may be discussed.

DOI
10.1002/pssb.2221240123

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In this work, we theoretically study the absorption and dispersion coefficients of a probe field in four-level N-scheme atomic systems driven by two additional fields. We separate the steady-state solution of the appropriate density matrix element into the sum of three resonances. The effect of each resonance on the overall absorption and dispersion experienced by the probe is studied as a function of the strengths of the two other fields. In the limit of low saturation, we reveal the physics of these resonances and associate them with atomic excitation pathways, which we explicitly explain in the bare-states picture.
General expressions for the steady-state population distribution and complex susceptibilities of a three-level system interacting with two strong near-resonant electromagnetic fields are obtained using a density-matrix formalism. A complete treatment of the steady-state population distribution established in the three-level system, under the action of two strong fields with arbitrary resonance detunings is presented. The criterion for maximal populations of the exciting levels, as well as conditions in which the population of the exciting levels exceeds the population of the ground state are found. The modification of the absorption and emission lines with increasing intensity of the second (probe) field is considered. The emphasis in the present treatment, as distinct from Panock and Temkin (see IEEE J. Quantum Electron., vol.QE-13, p.476 (1977)) is on the consideration of the arbitrary distribution of the equilibrium populations of the system which exhibits a number of interesting features which have not been previously discussed.
Saturation properties of absorption, dispersion, and mixing susceptibilities in semiconductors have been described using the density matrix approach. This model, which takes into account both intraband thermalization and interband relaxation including Auger recombination, allows for numerical computation of the susceptibilities whatever the temperature and laser intensity are. As a simplification, an equivalent two-level system is derived which represents very well absorption and mixing susceptibilities for any laser wavelength, dispersion being correctly described by this model only when the pump frequency is close to or smaller than the band-gap energy. Such an equivalence is very easy to handle and allows for great simplification when the susceptibilities are introduced into the propagation equations.