Abstract We report the deterministic writing of single nitrogen-vacancy defects in commercially available high purity diamond using only laser processing. The positioning accuracy of the single defects is around 250 nm and about 20% of the written defects display near transform-limited optical transitions at a temperature of 5 K. The results represent a significant step towards defect-engineered devices using colour centres as coherent spin-photon interfaces for quantum technologies, and shed light on the physical mechanism for laser-induced vacancy diffusion in diamond.
Diamond is a leading quantum photonics platform due to its ability to host qubits based on crystal defects such as nitrogen-vacancy centres. Fabricating nanophotonic devices from defect-rich diamond, which underpins many quantum sensing technologies, promises enhanced performance and integrability of diamond quantum sensors. Here we demonstrate microdisk cavities fabricated from defect-rich diamond that support optical modes with high quality factor (
Q∼7×104 at
1042nm) and show that they exhibit saturable absorption. Power-dependent spectroscopy measurements spanning 979
nm to 1604
nm are used to observe intensity-dependent cavity loss and extract wavelength-dependent absorption coefficients and saturation intensities. At 1047
nm, we observe saturation and measure a saturation intensity of
2.1(8)MW/cm
2 and an absorption coefficient of
0.53(2)cm
−1. These results provide insight into defect-mediated optical loss in diamond nanophotonics and suggest strategies to harness defect-induced nonlinearities in future diamond photonic devices.
Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.