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Elsevier eBooks

Using defect centres in diamonds to build photonic and quantum optical devices

Andreas Wolfgang Schell, Janik Wolters, Tim Schröder, Oliver J. Benson

Published Jan 1, 2014• 2 citations
Publisher
DOI
10.1533/9780857096685.2.160

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Diamond is a leading quantum photonics platform due to its ability to host qubits based on crystal defects such as nitrogen-vacancy centres. Fabricating nanophotonic devices from defect-rich diamond, which underpins many quantum sensing technologies, promises enhanced performance and integrability of diamond quantum sensors. Here we demonstrate microdisk cavities fabricated from defect-rich diamond that support optical modes with high quality factor (${Q}\sim7\times10^4$ at $1042\,$nm) and show that they exhibit saturable absorption. Power-dependent spectroscopy measurements spanning 979$\,$nm to 1604$\,$nm are used to observe intensity-dependent cavity loss and extract wavelength-dependent absorption coefficients and saturation intensities. At 1047$\,$nm, we observe saturation and measure a saturation intensity of $2.1\,(8)\,$MW/cm$^2$ and an absorption coefficient of $0.53\,(2)\,$cm$^{-1}$. These results provide insight into defect-mediated optical loss in diamond nanophotonics and suggest strategies to harness defect-induced nonlinearities in future diamond photonic devices.

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Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Nature Communications•Dec 9, 2019•503 citations
Abstract We report the deterministic writing of single nitrogen-vacancy defects in commercially available high purity diamond using only laser processing. The positioning accuracy of the single defects is around 250 nm and about 20% of the written defects display near transform-limited optical transitions at a temperature of 5 K. The results represent a significant step towards defect-engineered devices using colour centres as coherent spin-photon interfaces for quantum technologies, and shed light on the physical mechanism for laser-induced vacancy diffusion in diamond.
Diamond is a leading quantum photonics platform due to its ability to host qubits based on crystal defects such as nitrogen-vacancy centres. Fabricating nanophotonic devices from defect-rich diamond, which underpins many quantum sensing technologies, promises enhanced performance and integrability of diamond quantum sensors. Here we demonstrate microdisk cavities fabricated from defect-rich diamond that support optical modes with high quality factor (Q∼7×104{Q}\sim7\times10^4Q∼7×104 at 1042 1042\,1042nm) and show that they exhibit saturable absorption. Power-dependent spectroscopy measurements spanning 979 \,nm to 1604 \,nm are used to observe intensity-dependent cavity loss and extract wavelength-dependent absorption coefficients and saturation intensities. At 1047 \,nm, we observe saturation and measure a saturation intensity of 2.1 (8) 2.1\,(8)\,2.1(8)MW/cm2^22 and an absorption coefficient of 0.53 (2) 0.53\,(2)\,0.53(2)cm−1^{-1}−1. These results provide insight into defect-mediated optical loss in diamond nanophotonics and suggest strategies to harness defect-induced nonlinearities in future diamond photonic devices.
Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.