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Electronics Letters

Frequency stabilisation of a semiconductor laser using Rb-D 1 and D 2 absorption lines

Takashi Sato, M. Niikuni, S. Sato, Minoru Shimba

Published Mar 31, 1988• 16 citations
Publisher

Abstract

The Rb-D1 and D2 absorption lines and their spectroscopy systems are examined and discussed as a frequency standard for frequency stabilisation of a semiconductor laser. It is concluded that the Rb-D2 saturated absorption profile has large Doppler free spectra and is a good frequency standard.
DOI
10.1049/el:19880291

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The frequency of a GaAs semiconductor laser was locked to the hyperfine spectrum of the Rb D/sub 1/ line by saturation spectroscopy. A first GaAs laser was locked to one of the Doppler-free hyperfine lines using a source modulation method. The burnt hole modulated by the stabilized laser beam was detected by a second laser beam irradicated from the same or the opposite direction and was used as a frequency discriminator to stabilize the second laser. The characteristics of the double-resonance spectrum were measured. The frequency stability of the second laser, which was free from frequency modulation, was estimated to be on the order of 10/sup -9/.>
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We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laser-frequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption spectrum. The method uses the normal and abnormal saturated absorption spectra of the same transition 5 2 S 1/2 , F = 2–5 2 P 3/2 , F ' = 3 saturated absorption of the 87 Rb D 2 resonance line. After subtracting these two signals with the help of electronics, we can obtain a spectrum with a single peak to lock the laser. In our experiment, we use the normal and inverse signals of the transitions 5 2 S 1/2 , F = 2–5 2 P 3/2 , F ' = 3 saturated absorption of the 87 Rb D 2 resonance line to lock a 780-nm distributed feedback (DFB) diode laser. This method improves the long-term locking performance and is suitable for other kinds of diode lasers.