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Progress of Theoretical Physics

Metal-Insulator Transition Due to Electron Correlation

Arisato Kawabata

Published Sep 1, 1976• 7 citations
Publisher

Abstract

Metal insulator transition is investigated on the Hubbard model of which the interatomic hopping energy is dependent on the volume of the system. The electron correlation is treated with the use of the method developed by the author before. It is shown that a first order transition with a critical point exist for an appropriate values of parameters although the result is quantitatively unsatisfactory.

DOI
10.1143/ptp.56.717

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Metal insulator transition is investigated on the Hubbard model of which the interatomic hopping energy is dependent on the volume of the system. The electron correlation is treated with the use of the method developed by the author before. It is shown that a first order transition with a critical point exist for an appropriate values of parameters although the result is quantitatively unsatisfactory.
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Starting from the exact solution of the Hubbard model in the atomic limit, and treating the hopping term as a perturbation by means of a diagram technique, we discuss the electronic structure of the model in some simple approximations. We show that a metal-insulator transition is obtained above a critical value of the on-site Coulomb interaction in a self-consistent evaluation of the one-particle Green's function to one-loop order. A relationship with results in infinite dimensions is briefly discussed.
A generalized Hubbard model with correlated hoppings is studied at half filling using exact diagonalization methods. For certain values of the hopping parameters our results for several static properties, the Drude weight and the single-particle spectra function, suggest the occurrence of a metal-insulator transition (MIT) at a finite value of the local Coulomb interaction Uc{\mathit{U}}_{\mathit{c}}Uc​. We identify the regions of the hopping parameters where the MIT is of the Mott type. In these regions, for large UUc{\mathit{U}}_{\mathit{c}}Uc​, we find a ferromagnetic ground state.
The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a paramagnetic insulating phase. Calculations of the density of states and double occupancy show that the ground state in the insulating phase contains always a small fraction of empty and doubly occupied sites. The structure of the ground state is studied by considering the probability amplitude of intersite hopping. The results indicate that the ground state of the Mott insulator is characterized by a local antiferromagnetic order; the electrons keep some mobility, but this mobility must be compatible with the local ordering. The vanishing of some intersite probability amplitudes at U=Uc puts a constrain on the electron mobility. It is suggested that such quantities might be taken as the quantities which control the order in the insulating phase.
We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute the sign problem with various parameters such as temperature, disorder, on-site interactions, and lattice size. We show that in the presence of randomness in the hopping elements, the metal-insulator transition occurs and the critical disorder strength differs at different fillings. We also demonstrate that doping is a driving force behind the metal-insulator transition.