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Physical Review Letters

Quantum Interference Effects in Spontaneous Emission from an Atom Embedded in a Photonic Band Gap Structure

Shi-Yao Zhu, Hong Chen, Hu Huang

Published Jul 14, 1997• 229 citations
Publisher

Abstract

The spontaneous emission from a three-level atom embedded in a photonic band gap structure is studied. Interference between two transitions leads to quasiperiodic oscillations of population between the two upper levels with large amplitudes. The spontaneous emission of the atom is characterized by three components in the radiated field: a localized part, a traveling pulse, and a $(1/\sqrt{t}{)}^{3}$ decaying part. An analytical expression for the localization distance of the localized field is obtained. The energy velocity for the traveling pulse could be close to zero. By selecting an appropriate initial superposition state, a large amount of population trapping can be achieved.

DOI
10.1103/physrevlett.79.205

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The spontaneous emission from a three-level atom embedded in a photonic band gap structure is studied. Interference between two transitions leads to quasiperiodic oscillations of population between the two upper levels with large amplitudes. The spontaneous emission of the atom is characterized by three components in the radiated field: a localized part, a traveling pulse, and a (1/t)3(1/\sqrt{t}{)}^{3}(1/t​)3 decaying part. An analytical expression for the localization distance of the localized field is obtained. The energy velocity for the traveling pulse could be close to zero. By selecting an appropriate initial superposition state, a large amount of population trapping can be achieved.
We investigate the spontaneous emission from a V three-level atom embedded in two-band isotropic photonic crystals. The dipoles of the two transitions from the two upper levels to the lower level are parallel. Due to the quantum interference between the two transitions and the existence of two bands, the populations in the upper levels display some novel properties, such as anti-trapping and continuous oscillation, which differ from that of a two-level atom (with two bands) and also differ from that if only one band (for three-level atom) is considered. The spontaneous emission field is composed of two parts: localized field and travelling field. The localized field is composed of one or two localized modes, and the travelling field is composed of no, one, two or three propagating modes depending on different conditions. The conditions for different combinations of localized modes and propagating modes are discussed.
Spontaneous emission from a V-type three-level atom in a photonic crystal is investigated. Quantum interference between the two atomic transitions affects the constructor of dressed states, and leads to an interesting behavior of the populations in the two upper levels: antitrapping, periodic oscillation, and no population inversion. Those properties depend strongly on the relative position of the upper levels from the forbidden gap and the initial state of the atom, and differ from that of a two-level atom in a photonic crystal. The emitted field, which is composed of localized mode(s) and propagating mode(s), is also studied. Quantum interference can enhance or reduce the energy of the localized field.
Spontaneous emission from a two-level atom embedded in photonic crystals was investigated in this paper. Due to the photon localization and the quantum interference between the two dressed states, some changes in the radiation field take place: when the excited level moves from the gap to the band, the energy of the localized field is transferred to the propagating field through the diffusion field. If the localized field and the propagating field could coexist, the population evolution in the excited level would exhibit quasi-oscillation behavior. If they could not coexist, there would be no quasi-oscillation. The steady-state trapped atom population in the excited level is changed also. All these characteristics depend not only on the relative position δ of the excited level ω _1 with respect to the band-edge ω _c but also on the photon density of states ρ(ω_k) (or the band-edge smoothing parameter e ) near the band edge.
We investigate spontaneous emission from a two-level atom embedded in photonic crystals. Due to the photon localization and the quantum interference between the two dressed states, some changes of the radiation field happen, and the energy is transferred among the excited atom, the localized field, the propagating field and the diffusion field. If there is a localized field, it appears quasi-oscillation behaves of the population evolution in the excited level. If there isn't a localized field, it appears no quasi-oscillation. Moreover, there have some steady-state trapped atom populations in the excited level, and the spontaneous emission spectrum near the forbidden gap edge is different from that in the vacuum. All these characteristics depend not only on the relative position of the excited level from the band-edge but also on the photon density of states (or the band-edge smoothing parameter) near the band edge.