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Journal of Applied Physics

Determination of the dissipation in superconducting Josephson junctions

Daniela Mugnai, Anedio Ranfagni, Ilaria Cacciari

Published Feb 2, 2015• 1 citation
Publisher

Abstract

The results relative to macroscopic quantum tunneling rate, out of the metastable state of Josephson junctions, are examined in view of determining the effect of dissipation. We adopt a simple criterion in accordance to which the effect of dissipation can be evaluated by analyzing the shortening of the semiclassical traversal time of the barrier. In almost all the considered cases, especially those with relatively large capacitance values, the relative time shortening turns out to be about 20% and with a corresponding quality factor Q ≃ 5.5. However, beyond the specific cases here considered, still in the regime of moderate dissipation, the method is applicable also to different situations with different values of the quality factor. The method allows, within the error limits, for a reliable determination of the load resistance RL, the less accessible quantity in the framework of the resistively and capacitively shunted junction model, provided that the characteristics of the junction (intrinsic capacitance, critical current, and the ratio of the bias current to the critical one) are known with sufficient accuracy.

DOI
10.1063/1.4906973

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The results relative to macroscopic quantum tunneling rate, out of the metastable state of Josephson junctions, are examined in view of determining the effect of dissipation. We adopt a simple criterion in accordance to which the effect of dissipation can be evaluated by analyzing the shortening of the semiclassical traversal time of the barrier. In almost all the considered cases, especially those with relatively large capacitance values, the relative time shortening turns out to be about 20% and with a corresponding quality factor Q ≃ 5.5. However, beyond the specific cases here considered, still in the regime of moderate dissipation, the method is applicable also to different situations with different values of the quality factor. The method allows, within the error limits, for a reliable determination of the load resistance RL, the less accessible quantity in the framework of the resistively and capacitively shunted junction model, provided that the characteristics of the junction (intrinsic capacitance, critical current, and the ratio of the bias current to the critical one) are known with sufficient accuracy.
The various ways of evaluating dissipative effects in macroscopic quantum tunneling are re-examined. The results obtained by using functional integration, while confirming those of previously given treatments, enable a comparison with available experimental results relative to Josephson junctions. A criterion based on the shortening of the semiclassical traversal time $\ensuremath{\tau}$ of the barrier with regard to dissipation can be established, according to which $\ensuremath{\Delta}\ensuremath{\tau}/\ensuremath{\tau}\ensuremath{\gtrsim}N/Q$, where QQQ is the quality factor of the junction and NNN is a numerical constant of order unity. The best agreement with the experiments is obtained for N=1.11N=1.11N=1.11, as it results from a semiempirical analysis based on an increase in the potential barrier caused by dissipative effects.
The problem of evaluating dissipative effects in macroscopic quantum tunneling is re-examined for the case of Josephson junctions, with the adoption of an alternative way with respect to several previously proposed and, in some cases, contradictory approaches. The system, which consists of a junction coupled to a transmission line, is analyzed both analytically and numerically. A test of the theoretical model, as compared to the experimental results available, is performed in accordance with a criterion based on a shortening of the traversal time.
Measurements of temperature dependence of the return current in high quality Nb/AlOx/Nb Josephson junctions are presented. From the experimental data, we obtain the effective resistance, i.e., the effective dissipation, for the retrapping process, according to the generalized resistively shunted junction model proposed by Chen, Fisher, and Leggett. We present a careful analysis, based on a comparison between the measured temperature dependencies of both the return and the quasiparticle tunneling current. We find that the junction subgap conductance, which includes the quasiparticle and the quasiparticle-pair interference terms, is responsible for the return process. The measurements have been performed on various samples, in a wide range of critical current densities from 50 to 2250 A/cm2, covering different damping regimes and spanning over the high and low temperature limits. Junctions with low critical current density show ideal dissipation which makes the return current scale with temperature according to the BCS exponential behavior without flattening out effects. This result may be relevant for the possible use of Nb/AlOx/Nb junctions in macroscopic quantum coherence experiments, which strongly require a very low dissipation.
The effect of the voltage-dependent junction resistance R/sub j/ on the critical current decay of Josephson junctions was studied. In the thermal regime, the author has obtained a simple expression for the lifetime of the zero-voltage state which takes into account the nonlinear dependence of R/sub j/ on the voltage, removing an assumption of the resistivity shunted junction model (RSJ), which assumes an ohmic shunt resistance to describe the junction dissipation. These results are confirmed by experimental data which also show the relevance of the intrinsic dissipation due to the presence of quasiparticles. This latter aspect is relevant, because it allows extremely underdamped systems to be obtained at low temperatures. These conditions are particularly interesting to study a macroscopic quantum aspect, namely the effects of the presence of quantized energy levels on the supercurrent decay. The dependence of this latter effect on the junction resistance is also briefly discussed.
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor-ferromagnet-superconductor (SFS) heterostructures, as either spintronic devices or switchable elements in quantum and classical circuits. Recent experimental evidence of macroscopic quantum tunneling and of an incomplete 0-$\ensuremath{\pi}$ transition in tunnel-ferromagnetic spin-filter JJs could also enhance the capabilities of SFS JJs as active elements. Here, we provide a self-consistent electrodynamic characterization of NbN\mathrm{Nb}\mathrm{N}NbN/GdN\mathrm{Gd}\mathrm{N}GdN/NbN\mathrm{Nb}\mathrm{N}NbN spin-filter JJs as a function of the barrier thickness, disentangling the high-frequency dissipation effects due to the environment from the intrinsic low-frequency dissipation processes. The fitting of the III-VVV characteristics at 4.2 K and at 300 mK by using the tunnel-junction-microscopic model allows us to determine the subgap resistance Rsg{R}_{\mathrm{sg}}Rsg​, the quality factor QQQ, and the junction capacitance CCC. These results provide the scaling behavior of the electrodynamic parameters as a function of the barrier thickness, which represents a fundamental step for the feasibility of tunnel-ferromagnetic JJs as active elements in quantum and classical circuits, and are of general interest for tunnel junctions other than conventional SIS JJs.
We present an interpretation of traversal time results in Josephson junctions, based on a stochastic model of tunneling processes which include dissipative effects. With the use of semiclassical analysis, the experiments performed up until now have supplied a time duration of the order of 102ps{10}^{2}\mathrm{ps}102ps (a remarkably long time, even considering the macroscopic nature of the systems under examination). According to our interpretation, this duration is only the imaginary part of a complex quantity, the real part of which (presumably the true physical duration) lies in the range of a few picoseconds.