Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Transactions on Magnetics

Non-destructive read out operation of SFQ memory cells: Simulations and experimental results

G. Matheron, Ph. Migny

Published May 1, 1983• 1 citation
Publisher

Abstract

Single flux quantum two junction interferometers appear as attractive memory cells for constituting dense and low dissipating arrays. In this paper an investigation of cell parameters leading to Non-Destructive Read Out (NDRO) operation and non volatile storage is presented. Basic requirements are defined, various possible designs are studied through static and dynamic simulations, experimental results for one of them are given. Finally, memory array concepts involving statistical analysis on electrical parameters spreads are proposed.

DOI
10.1109/tmag.1983.1062344

Related papers

High density NDRO SFQ Joshepson interferometer momory cell

H. Beha

A new Single Flux-Quantum (SFQ) Nondestructive Read-Out (NDRO) random-access asymmetric 2-Josephson-junction interferometer memory cell with only one control line has been investigated and designed. The binary information is stored in the cell nonvolatilely without a bias current. For random access, this is the first known interferometer memory cell without a diagonal line. Therefore, this NDRO SFQ memory cell leads intrinsically to smaller cell area and simpler decoder schemes. A cell design of only 52 lithographic squares is given to demonstrate the potential for high-density memory chips. Wide nominal read and write operating margins are obtained. The NDRO interferometer memory cell proposed is promising for use in a high-performance Josephson computer.

IEEE Transactions on Magnetics•Nov 1, 1981•2 citations

An Improved Josephson Interferometer Memory Cell for Nondestructive Read-Out

Masafumi Yamamoto, Akira Ishida

An improved single flux-quantum Josephson interferometer memory cell which brought stable nondestructive read-out (NDRO) operation was proposed. The cell was constructed with an end-fed asymmetric two-junction interferometer, in which the bit operating current level could be set far above the critical point for stable NDRO operation. Damping condition for proper memory operation was studied by computer simulation. The NDRO operation was experimentally obtained for the McCumber damping parameter βc of 300–400.

International Conference on Solid State Devices and Materials (SSDM)•Aug 26, 1980•3 citations

Single flux-quantum memory cells

Pierre Guéret, Th. O. Mohr, P. Wolf

Detailed investigations have been carried out on two-junction interferometers. These devices have potential as memory elements. Information is stored as single-flux quanta (SFQ cells) in overlapping vortex modes and is destructively read out by switching from a vortex to the voltage state. The devices are fabricated with a lead alloy and the junction oxide is formed by rf oxidation. Most investigations have been done on devices with an area of about 1000 μm2, but storage and reading have also been demonstrated in our smallest interferometers having a size of about 150 μm2. Computer studies of cell properties, especially of the vortex transitions, have given good agreement with experiments. It has also been found that the cell behavior is little affected by loads such as would exist in an array environment.

IEEE Transactions on Magnetics•Jan 1, 1977•28 citations

Memories with Josephson Junctions

Peter Wolf

The talk is based on an overview which was published recently (1). For this reason, only an abstract is given here, which includes Later results not contained in the aforementioned overview. The presently-known Josephson memory cells store information as persistent currents in superconducting loops, or what is equivalent as a magnetic flux in the area of the ring. This method of storage is nonvolatile and has no power consumption in the storing state. In a superconducting ring system, the magnetic flux is quantized, and cells have been built which operate either with only one flux quantum, or with many of them. For the Latter cells with many flux quanta (ring cells), quite a number of designs exist. They have one or two Josephson junctions in the ring, which allow writing. An external junction which is controlled by the ring current serves for non-destructive reading of the information. The smallest cell realized had an area of 900 ?m2 with a 2 ?m minimum line width. Switching speed was ? 80 ps. Cells which store information as a single-flux quantum (single flux-quantum cells = SFQ cells) in the ring, usually contain two Josephson junctions used for reading and writing. Read-out in most of these cells is destructive, but methods of reading non-destructively have also been proposed. The smallest device made had an area of ? 150 ?m2 with a minimum line width of 2 ?m. The read signal had a rise time ? 100 ps.

European Solid-State Circuits Conference (ESSCIRC)•Sep 1, 1978•0 citations

A Vortex Transitional NDRO Josephson Memory Cell

Shuichi Tahara, Y. Wada

A new vortex transitional NDRO memory cell has been proposed for use as a high-speed cache memory. The memory cell consists of two superconducting loops with one Josephson junction and a two-junction interferometer gate. The superconducting loop stores single-flux quantum. The interferometer gate operates as a sense gate. The memory cell employs a vortex transition in the superconducting loop for the writing and reading of data. The sense gate current margin increases to ±38% since the coupling magnetic flux is amplified by the vortex transition for nominally designed cell parameters. The memory cell operates with a ±33% address signal current margin. This paper describes the memory cell design and the dynamic behavior of computer simulations.

Japanese Journal of Applied Physics•Sep 1, 1987•17 citations

Nondestructive memory cell using a two-junction Josephson interferometer

Michitada Morisue, S. Koike, K. Moritan

This paper presents a novel nondestructive memory cell using a two-junction interferometer. Most of single-flux-quantum memory cells have been the destructive ones, which must rewrite the information for logic "1" after a reading operation. This makes the circuitry of the cell complex. To avoid this disadvantage, a novel self-rewriting technique is introduced by setting a coil between the terminals of the interferometer. The principle of the operation of the cell is described and the simulation for the behaviours of the cell are illustrated in detail. The results of the simulation show that the reliable operation of the cell can be achieved with high operating speed.

IEEE Transactions on Magnetics•May 1, 1983•0 citations
Single flux quantum two junction interferometers appear as attractive memory cells for constituting dense and low dissipating arrays. In this paper an investigation of cell parameters leading to Non-Destructive Read Out (NDRO) operation and non volatile storage is presented. Basic requirements are defined, various possible designs are studied through static and dynamic simulations, experimental results for one of them are given. Finally, memory array concepts involving statistical analysis on electrical parameters spreads are proposed.
A new Single Flux-Quantum (SFQ) Nondestructive Read-Out (NDRO) random-access asymmetric 2-Josephson-junction interferometer memory cell with only one control line has been investigated and designed. The binary information is stored in the cell nonvolatilely without a bias current. For random access, this is the first known interferometer memory cell without a diagonal line. Therefore, this NDRO SFQ memory cell leads intrinsically to smaller cell area and simpler decoder schemes. A cell design of only 52 lithographic squares is given to demonstrate the potential for high-density memory chips. Wide nominal read and write operating margins are obtained. The NDRO interferometer memory cell proposed is promising for use in a high-performance Josephson computer.
An improved single flux-quantum Josephson interferometer memory cell which brought stable nondestructive read-out (NDRO) operation was proposed. The cell was constructed with an end-fed asymmetric two-junction interferometer, in which the bit operating current level could be set far above the critical point for stable NDRO operation. Damping condition for proper memory operation was studied by computer simulation. The NDRO operation was experimentally obtained for the McCumber damping parameter βc of 300–400.
Detailed investigations have been carried out on two-junction interferometers. These devices have potential as memory elements. Information is stored as single-flux quanta (SFQ cells) in overlapping vortex modes and is destructively read out by switching from a vortex to the voltage state. The devices are fabricated with a lead alloy and the junction oxide is formed by rf oxidation. Most investigations have been done on devices with an area of about 1000 μm2, but storage and reading have also been demonstrated in our smallest interferometers having a size of about 150 μm2. Computer studies of cell properties, especially of the vortex transitions, have given good agreement with experiments. It has also been found that the cell behavior is little affected by loads such as would exist in an array environment.
The talk is based on an overview which was published recently (1). For this reason, only an abstract is given here, which includes Later results not contained in the aforementioned overview. The presently-known Josephson memory cells store information as persistent currents in superconducting loops, or what is equivalent as a magnetic flux in the area of the ring. This method of storage is nonvolatile and has no power consumption in the storing state. In a superconducting ring system, the magnetic flux is quantized, and cells have been built which operate either with only one flux quantum, or with many of them. For the Latter cells with many flux quanta (ring cells), quite a number of designs exist. They have one or two Josephson junctions in the ring, which allow writing. An external junction which is controlled by the ring current serves for non-destructive reading of the information. The smallest cell realized had an area of 900 ?m2 with a 2 ?m minimum line width. Switching speed was ? 80 ps. Cells which store information as a single-flux quantum (single flux-quantum cells = SFQ cells) in the ring, usually contain two Josephson junctions used for reading and writing. Read-out in most of these cells is destructive, but methods of reading non-destructively have also been proposed. The smallest device made had an area of ? 150 ?m2 with a minimum line width of 2 ?m. The read signal had a rise time ? 100 ps.
A new vortex transitional NDRO memory cell has been proposed for use as a high-speed cache memory. The memory cell consists of two superconducting loops with one Josephson junction and a two-junction interferometer gate. The superconducting loop stores single-flux quantum. The interferometer gate operates as a sense gate. The memory cell employs a vortex transition in the superconducting loop for the writing and reading of data. The sense gate current margin increases to ±38% since the coupling magnetic flux is amplified by the vortex transition for nominally designed cell parameters. The memory cell operates with a ±33% address signal current margin. This paper describes the memory cell design and the dynamic behavior of computer simulations.
This paper presents a novel nondestructive memory cell using a two-junction interferometer. Most of single-flux-quantum memory cells have been the destructive ones, which must rewrite the information for logic "1" after a reading operation. This makes the circuitry of the cell complex. To avoid this disadvantage, a novel self-rewriting technique is introduced by setting a coil between the terminals of the interferometer. The principle of the operation of the cell is described and the simulation for the behaviours of the cell are illustrated in detail. The results of the simulation show that the reliable operation of the cell can be achieved with high operating speed.